CS22-12IO1M ISC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 1

Technical content

isc website:www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors CS22-12IO1M

DESCRIPTION

  • WithTO-220Fpackaging
  • Long-term stability
  • Thyristorforlinefrequency
  • Planarpassivated chip
  • MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation

APPLICATIONS

  • Switching applications
  • ACpowercontroller
  • Motorcontrol
  • Powerconverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peakoff-state voltage 1200 V VRRM Repetitive peakreverse voltage 1200 V IT(AV) Average forward current Tc=85℃ 16 A ITSM Surge non-repetitiveon-state current 50HZ (1/2cycle,sine wave;Tc=45℃ ) 60HZ 300 340 A PG(AV) Average gatepower dissipation 0.5 W Tj Operating junctiontemperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitivepeak reversecurrent VRM=VRRM VDM=VDRM Tj=25℃ 5 mAIDRM Repetitivepeak off-state current VTM On-state voltage ITM=30A 1.5 V IGT Gate-triggercurrent VD =6V 30 mA VGT Gate-triggervoltage VD =6V 1.5 V Rth(j-c) Thermalresistance Junctiontocase 2.5 ℃/W