CS213 NEOTEC | Alldatasheet
Document overview
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Technical content
Features
Detection Accuracy Over-charge Detection: ±40mV Over-discharge Detection: ±100mV Discharge Over-current Detection: ±20mV High Withstand Voltage Absolute maximum ratings: 28V (V- pin and CO pin) Ultra Small Package SOT-23-6
Description
The CS213 is the 1-cell protection IC for lithium-ion/lithium-polymer rechargeable battery pack. This protection IC was developed for use with lithium-ion/lithium polymer 1-cell serial batteries. It detects over-charge, over-discharge, discharge over-current and other abnormalities, and functions to protect the battery by turning off the external FETs. The IC also has a built-in timer circuit (for detection delay times), so fewer external parts can be used in protection circuit configuration. The tiny package is especially suitable for compact portable device, i.e. slim mobile phone and Bluetooth earphone. Application Mobile phone battery packs Digital camera battery packs Bluetooth earphone Li-ion battery module Typical Application Circuit
Neotec Semiconductor Ltd. 2/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Package and Pin Description Pin assignment compatible with RICOH R542X, SEIKO S-8261, RICHTEK RT9541CER, FORTUNE DW-01, DW-02.
Ordering Information
Detection voltage: Remark: Please contact our sales office for the products with detection voltage value other than those specified above. Pin No. Symbol Description
1 DO Connection of discharge control FET gate
2 V- Voltage detection between V- pin and VSS pin
(Over-current / charger detection pin)
3 CO Connection of charge control FET gate
4 NC No connection
5 V DD Connection for positive power supply input
6 V SS Voltage detection between V- pin and VSS pin
(Over-current / charger detection pin) CS213 Over-charge Detection Voltage VDET1 (V) Over-charge Release Voltage VREL1 (V) Over-discharge Detection Voltage VDET2 (V) Over-discharge Release Voltage VREL2 (V) Discharge Over-current Detection Voltage VDET3 (V) 0V Battery Charge Function Power down mode Function NT1758 1 2 3 6 5 4 NT1758NT1758NT1758 1 2 3 6 5 4 NT1758NT1758 SOT-23-6 Version Type Package Type A6: SOT-23-6 Serial number
Neotec Semiconductor Ltd. 3/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Absolute Maximum Ratings Symbol Descriptions Rating Units VDD Supply Voltage -0.3 to 7 V V- V- pin V DD - 28 to VDD + 0.3 V VCO Output Voltage CO pin V DD -28 to VDD + 0.3 V VDO DO pin Vss - 0.3 to V DD + 0.3 V PD Power Dissipation 150 mW TOPT Operating Temperature Range -40 to +85 °C TSTG Storage Temperature Range -55 to +125 oC Applying any over “Absolute Maximum Ratings” practice can permanently damage the device. These data are indicated the absolute maximum values only but not implied any operating performance.
Electrical Characteristics
Symbol Item Conditions MIN TYP MAX Unit Detection Voltage VDET1 Over-charge detection voltage -- 4.250 4.290 4.330 V VREL1 Over-charge release voltage -- 3.990 4.090 4.190 V VDET2 Over-discharge detection voltage -- 2.4 2.5 2.6 V VREL2 Over-discharge release voltage -- 2.6 2.7 2.8 V VDET3 Discharge over-current detection voltage VDD=3.5V 0.13 0.15 0.17 V VSHORT Load short-circuiting detection voltage VDD=3.5V 0.30 0.50 0.70 V Detection Delay Time tVDET1 Output delay time of over-charge - 96 160 224 ms tVDET2 Output delay time of over-discharge - 10.8 18.0 25.2 ms tVDET3 Output delay time of discharge over-current VDD=3.5V 3.9 6.5 9.1 ms tSHORT Output delay time of Load short-circuiting detection VDD=3.5V 180 300 420 μs Current Consumption VDD Operating input voltage V DD - VSS 2.2 6.0 V IDD Supply current V DD=3.5V, V-=0V 1.0 3.0 5.5 μA 0V battery Charging Function V0CHA 0 V battery charge starting charger voltage
0 V battery charging
function “available” 1.0 V (Ta = 25oC)
Neotec Semiconductor Ltd. 4/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Symbol Item Conditions MIN TYP MAX Unit Detection Voltage VDET1 Over-charge detection voltage -- 4.250 4.290 4.330 V VREL1 Over-charge release voltage -- 3.990 4.090 4.190 V VDET2 Over-discharge detection voltage -- 2.4 2.5 2.6 V VREL2 Over-discharge release voltage -- 2.6 2.7 2.8 V VDET3 Discharge over-current detection voltage VDD=3.5V 0.12 0.15 0.18 V VSHORT Load short-circuiting detection voltage VDD=3.5V 0.16 0.50 0.84 V Detection Delay Time tVDET1 Output delay time of over-charge - 64 160 256 ms tVDET2 Output delay time of over-discharge - 7.2 18.0 28.8 ms tVDET3 Output delay time of discharge over-current VDD=3.5V 2.6 6.5 10.4 ms tSHORT Output delay time of Load short-circuiting detection VDD=3.5V 120 300 480 μs Current Consumption VDD Operating input voltage V DD - VSS 2.2 6.0 V IDD Supply current V DD=3.5V, V-=0V 1.0 3.0 7.0 μA 0V battery Charging Function V0CHA 0 V battery charge starting charger voltage function “available” 1.0 V (Ta = -40~85oC)
Neotec Semiconductor Ltd. 5/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Test Circuits Over-charge, over-discharge and the release detection voltages (test circuit 1) 1) Set V1=3.5V, V2=0V, S1=ON, then CS213 series enter operating mode. 2) Increase V1 voltage (from 3.5V) gradually. The V1 voltage is the over-charge detection voltage (V DET1) when CO pin goes low (from high). 3) Decrease V1 gradually. The V1 voltage is the over-charge release detection voltage (V REL1) when CO pin goes high again. 4) Continue decreasing V1. The V1 voltage is the over-discharge detection voltage (V DET2) when DO pin goes low. Then increase V1 gradually. The V1 voltage is the over-discharge release detection voltage (VREL2), when DO pin returns to high. Note: The over-charge and over-discharge release voltages are defined in versions. Discharge over-current detection voltage (test circuit 1) 1) Set V1=3.5 V, V2=0V, S1=ON and CS213 series enter operating condition. 2) Increase V2 (from 0V) gradually. The V2 voltage is the discharge over-current detection voltage (VDET3) when DO pin goes low (from high). Load short-circuiting detection voltage (test circuit 1) 1) Set V1=3.5V, V2=0V, S1=ON and CS213 series enter operating condition. 2) Increase V2 immediately (within 10uS) till DO pi n goes “low” from high with a delay time which is between the minimum and the maximum of Load short-circuiting delay time. Over-charge, over-discharge delay time (test circuit 1) 1) Set V1=3.5V, V2=0V, S1=ON to enter operating condition. 2) Increase V1 from V DET1-0.2V to VDET1+0.2V immediately (within 10us). The over-charge detection delay time (tVDET1) is the period from the time V1 gets to VDET1+0.2V till CO pin switches from high to low. 3) Set V1=3.5V, V2=0V, S1=ON and S2 = OFF to enter operating condition. 4) Decrease V1 from V DET2+0.2V to VDET2-0.2V immediately (within 10us). The over-discharge detection delay time (tVDET2) is the period from the time V1 gets to VDET2-0.2V till DO pin switches from high to low. Discharge over-current delay time (test circuit 1) 1) Set V1=3.5V, V2=0V, S1=ON to enter operating condition. 2) Increase V2 from 0V to 0.25V immediately (wit hin 10us). The discharge ov er-current detection delay time (tVDET3) is the period from the time V2 gets to 0.25V till DO pin switches from high to low. Load short-circuiting delay time (test circuit 1) 1) Set V1=3.5V, V2=0V, S1=ON to enter operating condition. 2) Increase V2 from 0V to 1.6V immediately (withi n 10us). The Load short-circuiting detection voltage delay time (tSHORT) is the period from the time V2 gets to 1.6V till DO pin switches from high to low. Operating current consumption (test circuit 2) 1) Set V1=3.5V, V2=0V and S1=ON to enter operating condition and measure the current I1. I1 is the operating condition current consumption (IDD). 0V battery charge starting charger voltage (test circuit 3) 1) Set V1=V2=0V, increase V2 gradually. 2) The V2 voltage is the 0V charge starting voltage (V 0CHA) when CO pin switches from low to high (V V- + 0.1V or higher). Recommended: 1) '0 V charge available' doesn't means CS213 can recover the zero-V cell to be full charged if this cell has been already damaged due to too low voltage. 2) For safety consideration, we strongly recommen ded to select '0 V charge inhibition' to prevent from charging a damaged cell.
Neotec Semiconductor Ltd. 6/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Test Circuit NT1758 VDD VSS CODO V- V2 I2 NT1758 VDD VSS CODO V- S1 I2 Test circuit 1 Test circuit 2 NT1758 VDD VSS CODO V- Test circuit 3 CS213 CS213 CS213
Neotec Semiconductor Ltd. 7/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Operation The CS213 provides over-charge, over-discharge, disc harge over-current and load s hort-circuiting protections for the 1-cell battery pack. CS213 continuously monitors the voltage of battery between V DD pin and VSS pin to control over-charge and over-discharge protections. When the battery pack is in discharging stage, the current flows from battery to the load through EB+ and EB-; t he voltage between V- pin and VSS pin is positive. The CS213 also monitors the voltage which is determined by the current of discharge and the series Rds(on) of MOSFETs between V- pin and VSS pin to detect discharge over-current current conditions. (1) Normal Condition (Operation mode) The CS213 turns both the charging and discharging control MOSFETs on when the voltage of battery is in the range from over-charge detection voltage (VDET1) to over-discharge detection voltage (VDET2), and the VM pin voltage is discharge over-current detection voltage (V DET3). This is called the normal condition that charging and discharging can be carried out freely. Caution: The CS213 may be needed connecting a charger to return to normal condition, when the battery is connected for the first time. (2) Over-charge Condition 1) Over-charge Protection When the VDD voltage is higher than the over-charge detection voltage (VDET1) and lasts for longer than the over-charge detection delay time (tVDET1), CS213 turns off the external charging MOSFET to protect the pack from being over-charged, which CO pin turns to “L” from “H” level. 2) Over-charge Protection Release When the battery voltage is lower than V REL1 and and charger is connected, CS213 would release this condition. When the battery voltage is lower than VDET1 and charger is removed, CS213 can be released from this condition. (3) Over-discharge Condition 1) Over-discharge Protection: When the VDD voltage is lower than the over-discharge detection voltage (V DET2) and lasts longer than over-discharge detection delay time (tVDET2), CS213 turns off the external discharge MOSFET to protect the pack from being over-discharged, which DO pin turns to “L” from “H” level. 2) Over-discharge Protection Release: The over-discharge protection is released when the battery voltage is higher than the over-discharge release voltage (VREL2). (4) Discharge Over-current Condition 1) Discharge Over-current Protection: The CS213 provides discharge over-current protection and load short-circuiting protection: (a) Discharge over-current protection occurs when V- pin voltage between V DET3 and VSHORT and lasts for a certain delay time (tVDET3) or longer. (b) Load short-circuiting protection occurs when V- pin voltage is higher than V SHORT and lasts for a certain delay time (tSHORT) or longer. When above conditions happen, the DO pin goes “L” from ”H” to turn off the discharging MOSFET. 2) Discharge Over-current and Load Sh ort-Circuiting Protection Release: When the V- pin voltage equals to VSHORT or lower, discharge over-current status returns to normal mode by remove external load.
Neotec Semiconductor Ltd. 8/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Block Diagram Logic Circuit and Delay Level Shifter VSS DO V- CO VDD Overcharge Comparator Overdischarge Comparator Load Short-circuiting Comparator Discharge Overcurrent Comparator +Charge Overcurrent Comparator
Neotec Semiconductor Ltd. 9/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. (a) Normal condition (b) Over-charge condition *: The charger is assumed to charge with a constant current. Timing Chart (1) Over-charge Operation
Neotec Semiconductor Ltd. 10/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. (2) Over-discharge, Discharge Over-current, Load Short-Circuiting Operation Short detection delay time VDD VSS VDET2 VSS VREL2 Battery voltage V- pin voltage DO pin voltage Charge current Charge/Discharge current Discharge current Overdischarge detect delay time Discharge overcurrent delay time Connect charger Connect load Connect charger Connect load Connect load Connect load Remove load Remove load DET2 tVDE2 VDE2t VDE3t SHORT t VDET3 VSS VDD V SHORT (a)(a) (a)(a)(a) (b) (b) (c) (d) t t t t (a) Normal condition (b) Over-discharge condition (c) Discharge over-current condition (d) Load short-circuit condition *: The charger is assumed to charge with a constant current.
Neotec Semiconductor Ltd. 11/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. Recommended Application Circuit Table1 Constant for external components Symbol Parts Purpose Recommended Min. Max. Remarks FET1 N channel MOSFET Discharge control - - - *1) 0.4 V < Threshold voltage < Over-discharge detection voltage. Gate to source withstand voltage > Charger voltage. FET2 N channel MOSFET Charge control - - - *1) 0.4 V < Threshold voltage < Over-discharge detection voltage. Gate to source withstand voltage > Charger voltage. R1 Resistor ESD protection, for power fluctuation 470Ω 100 Ω 1K Ω *2) Set Resistance to the value 2R1< R2. R2 Resistor Protection for reverse connection of a charger 1KΩ 300 Ω 2K Ω *4) The resistor is preventing big current when a charger is connected in reverse.
Neotec Semiconductor Ltd. 12/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. *1) If the threshold voltage of FET is lower than 0.4V, the FET may failed to stop the charging current. If the FET has a threshold voltage equal to or higher than the over-discharge detection voltage, discharging may be stopped before over-discharge is detected. If the charger voltage is higher than the withstanding voltage between the gate and source, the FET may be damaged. *2) Employing an over-specification (listed in above table) R1 may result in over-c harge detection voltage and release voltage higher than the defined voltage. If R1 has a higher resistance, the IC may be damaged caused by over absolute maximum rating of VDD voltage when a charger is connected reversely. *3) Applying a smaller capacitance C1 to system, DO may failed to function when load short-circuiting is detected. *4) R1 and R2 resistors are current limit resistance for a charge r connected reversibly or a large voltage charger that exceeds the absolute rating for VCC is connected, when we connect re verse charger the current flows from charger to R2, internal ESD diode and R1. This current will increase R1 voltage drop. Which can exceed VCC(max). In this case better to use smaller value for R1 and bigger value for R2. But small value of R1 will reduce R-C filter performance and system ESD reliability. Too big value of R2 can cause over-current automatic release problem. If R2 resistance is higher than 2k Ω, the charging current may not be cut when a high-voltage charger is connected. Caution: 1) The above constants may be changed without notice. 2) The application circuit above is for reference only. To determine the correct constants, evaluation of actual application is required. Precautions: 1) The application condition for the input voltage, output voltage, and load current should not exceed the package power dissipation. 2) Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.
Neotec Semiconductor Ltd. 13/13 CS213DS V1.5 2014/07/18 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec.
Package Information
L L SYMBOL MIN NOM MAX A －－ 1.45 A1 0.00 － 0.15 A2 0.90 1.15 1.30 b 0.30 0.4 0.50 c 0.08 － 0.22 D 2.70 2.90 3.10 E 2.60 2.80 3.00 E1 1.40 1.60 1.80 e － 0.95 BSC － e1 － 1.90 BSC － L 0.30 0.45 0.60 L1 － 0.6 REF － L2 － 0.25 BSC － θ 0° 4° 8° θ1 5° 10° 15° NOTES: 1. All dimensions show in mm 2. Reference: JEDECMO-178AA 3. SOT23-5 / SOT23-6 SYMBOL MIN NOM MAX A －－ 1.45 A1 0.00 － 0.15 A2 0.90 1.15 1.30 b 0.30 0.4 0.50 c 0.08 － 0.22 D 2.70 2.90 3.10 E 2.60 2.80 3.00 E1 1.40 1.60 1.80 e － 0.95 BSC － e1 － 1.90 BSC － L 0.30 0.45 0.60 L1 － 0.6 REF － L2 － 0.25 BSC － θ 0° 4° 8° θ1 5° 10° 15° NOTES: 1. All dimensions show in mm 2. Reference: JEDECMO-178AA 3. SOT23-5 / SOT23-6 AA2 A e b D E