HYG090N06LS1C2 CHIPSOURCETEK | Alldatasheet

Document overview

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Technical content

Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/60A R DS(ON) = 7.7 mΩ(typ.)@V GS = 10V R DS(ON) = 11.8 mΩ(typ.)@V GS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant)

Applications

 High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System Ordering and Marking Information G090N06 XYMXXXXXX Package Code C2: PPAK5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi- Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. PDFN5*6- Pin1 D D D D G S S S Single N-Channel MOSFET S S S G D D D D TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com HYG090N06LS1C2 矽源特科技 ChipSourceTek

Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) V DSS Drain-Source Voltage 60 V V GSS Gate-Source Voltage ±20 V T J Maximum Junction Temperature 175 °C T STG Storage Temperature Range -55 to 175 °C I S Source Current-Continuous(Body Diode) Tc=25°C 60 A Mounted on Large Heat Sink I DM Pulsed Drain Current * Tc=25°C 240 A I D Continuous Drain Current Tc=25°C 60 A Tc=100°C 42 A P D Maximum Power Dissipation Tc=25°C 62.5 W Tc=100°C 31.2 W R θJC Thermal Resistance, Junction-to-Case 2.4 °C/W R θJA Thermal Resistance, Junction-to-Ambient 50 °C/W E AS SinglePulsed-Avalanche Energy * L=0.3mH 85.4 mJ Note: * Repetitive rating ；pulse width limited by max.junction temperature. Surface mounted on FR-4 board. * Limited by T J max , starting T J =25°C , L = 0.3mH V DS =48V., V GS =10V.

Electrical Characteristics

(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG090N06LS1 Unit Min Typ. Max Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS= DS =250μA 60 - - V I DSS Drain-to-Source Leakage Current V DS 60V, V GS =0V - - 1 μA T J =100°C - - 50 μA V GS(th) Gate Threshold Voltage V DS GS , I DS =250μA 1.0 1.9 3.0 V I GSS Gate-Source Leakage Current V GS 20V,V DS =0V - - 100 nA R DS(ON) Drain-Source On-State Resistance V GS =10V,I DS =20A - 7.7 9.2 mΩ V GS =4.5V,I DS =20A - 11.8 14.1 mΩ Diode Characteristics V SD Diode Forward Voltage I SD =20A,V GS =0V - 0.87 1.3 V t rr Reverse Recovery Time I SD =20A,dI SD /dt =100A/μs - 22.9 - ns Q rr Reverse Recovery Charge - 15 - nC TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com HYG090N06LS1C2 矽源特科技 ChipSourceTek

Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG090N06LS1 Unit Min Typ. Max Dynamic Characteristics R G Gate Resistance V GS =0V V DS =0V,F=1MHz - 2.1 - Ω C iss Input Capacitance V GS V DS 25V Frequency=1.0MHz - 926 - pF C oss Output Capacitance - 505 - C rss Reverse Transfer Capacitance - 39 - t d(ON) Turn-on Delay Time V DD R G 2.5Ω, I DS =20A,V GS =10V - 7.7 - ns T r Turn-on Rise Time - 31.7 - t d(OFF) Turn-off Delay Time - 18.4 - T f Turn-off Fall Time - 34.8 - Gate Charge Characteristics Q g（10V） Total Gate Charge V DS =48V, V GS =10V, I D =20A - 18.5 - Q g（4.5V） Total Gate Charge - 9.4 - nC Q gs Gate-Source Charge - 3.9 - Q gd Gate-Drain Charge - 4.8 - Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com HYG090N06LS1C2 矽源特科技 ChipSourceTek

Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com HYG090N06LS1C2 矽源特科技 ChipSourceTek

Package Type Unit Quantity PPAK5*6-8L Reel 5000

Package Information

PPAK5*6-8L TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com HYG090N06LS1C2 矽源特科技 ChipSourceTek

Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin Temperature max (T smax Time (Tsmin to Tsmax) (t s 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds Average ramp-up rate smax to T P ) 3 °C/second max. 3°C/second max. Liquidous temperature (T L Time at liquidous (t L 183 °C 60-150 seconds 217 °C 60-150 seconds Peak package body Temperature p )* See Classification Temp in table 1 SeeClassification Tempin table 2 Time (t P ) within 5°C of the specified classification temperature (T c ) 20 seconds 30** seconds Average ramp-down rate (T p to T smax ) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com HYG090N06LS1C2 矽源特科技 ChipSourceTek

Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ ≥350 ＜2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C Table 2.Pb-free Process – Classification Temperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ 350-2000 Volume mm³ ≥2000 <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245°C PRECON JESD-22, A113 30°C/60%/192Hrs HTRB JESD-22, A108 168Hrs//500Hrs/1000Hrs, Bias @ 150°C HTGB JESD-22, A108 168 Hrs/500Hrs/1000Hrs, V gs 100% @ 150°C PCT JESD-22, A102 96 Hrs, 100%RH, 2atm, 121°C TCT JESD-22, A104 500 Cycles, -55°C~150°C TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com HYG090N06LS1C2 矽源特科技 ChipSourceTek