CR5AM KEXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Silicon Bidirectional Thyristors ■ Features

  • Blocking voltage to 400 V
  • General purpose bidirectional switching ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Repetitive peak off-state voltages VDRM,VRRM 400 V RMS on-state current IT(RMS) 5 A Non-repetitive peak on-state current ITSM 50 A Circuit Fusing Considerations (t = 8.3 ms) I2t A2s Peak Gate Voltage VGM 10 V Average Gate Power PG(AV) 0.3 W Peak Gate Power PGM 3 W Peak Gate Current IGM 2 A Operating Junction Temperature Range TJ -40 to 125 ℃ Storage Temperature Range Tstg -40 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Typ Max Unit Peak Repetitive Blocking Current IDRM, IRRM 2 Peak On- State Voltage VTM 1.8 V T2(+), G(+) 20 mA T2(+), G(-) mA T2(-), G(-) mA T2(-), G(+) - mA T2(+), G(+) 1.5 V T2(+), G(-) 1.5 V T2(-), G(-) 1.5 V T2(-), G(+) - V VD = Rated VDRM, VRRM ; Gate Open Test conditions IT= A VD= 6 V, RL= ΩIGTGate trigger current VGTGate trigger voltage G ■ Marking Marking CR5AM ThyristorSMD Type 10.4 mA RG =330Ω 6 20 VD= 6 V, RL= Ω RG =330Ω DC Gate Non-trigger Voltage VGD VD=1/2VDRM 0.2 V CR5AM 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 1.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 0.50+0.15 -0.15 9.70+0.2 -0.2 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 5.55+0.15 -0.15 2.65+0.25 -0.1 1.50+0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm 1 2 3 1.T1 3.GATE 2.T2

www.kexin.com.cn 2 ■ Typical Characteristics ThyristorSMD Type CR5AM 0.6 1.4 2.2 3.0 3.8 4.6 MAXIMUM ON-STATE CHARACTERISTICS INSTANTANEOUS ON-STATE CURRENT, I T , (AMPERES) INSTANTANEOUS ON-STATE VOLTAGE, V T , (VOLTS) T j = 25 o C T j = 125 o C 0.8 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION-TO-CASE) CYCLES AT 60 Hz TRANSIENT THERMAL IMPEDANCE, Z th(j-c) , ( C/WATT) 4.0 1.6 2.4 3.2 GATE CHARACTERISTICS (I, II, III) GATE CURRENT, I G , (mA) GATE VOLTAGE, V G , (VOLTS) V GD = 0.2V V GM = 10V V GT = 1.5V I GM = 2A P GM = 3W P G(avg) = 0.3W I RGT I, I FGT I, I RGT III 100 MAXIMUM SURGE CURRENT FOLLOWING RATED LOAD CONDITIONS CYCLES AT 60 Hz MAXIMUM PEAK SURGE CURRENT, I TSM , (AMPERES) 100 120 140 160 ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) CASE TEMPERATURE, T C , ( FOR AC CONTROL THIS GRAPH NEARLY APPLIES REGARDLESS OF THE CONDUCTION ANGLE CONDUCTION RESISTIVE, INDUCTIVE LOADS 100 120 140 160 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) AMBIENT TEMPERATURE, T a , ( RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 120 x 120 x t 2.3 100 x 100 x t 2.3 60 x 60 x t 2.3 FIN: A PLATE PAINTED BLACK WITH GREASE CURVES APPLY REGARDLESS OF THE CONDUCTION ANGLE 100 120 140 160 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) AMBIENT TEMPERATURE, T a , ( 0.8 0.4 1.2 2.0 1.6 2.4 3.2 2.8 NATURAL CONVECTION, NO FIN CURVES APPLY REGARDLESS OF THE CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS MAXIMUM ON-STATE POWER DISSIPATION RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) MAXIMUM POWER DISSIPATION, (WATTS) 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( GATE TRIGGER CURRENT, (t GATE TRIGGER CURRENT, (25 x 100% -60 -20 100 140 -40 120 I RGT I, I RGT III I FGT I, 360

www.kexin.com.cn 3 ThyristorSMD Type CR5AM GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( GATE TRIGGER VOLTAGE, (t GATE TRIGGER VOLTAGE, (25 x 100% -60 -20 100 140 -40 120 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (TYPICAL) RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/ m 100 120 140 160 BREAKOVER VOLTAGE, (dv/dt = x V/ m BREAKOVER VOLTAGE, (dv/dt = 1V/ m x 100% T j = 125 C I QUADRANT III QUADRANT REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( -60 -20 100 140 -40 120 REPETITIVE PEAK OFF-STATE CURRENT, (t REPETITIVE PEAK OFF-STATE CURRENT, (25 x 100% HOLDING CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( HOLDING CURRENT, I H , (mA) -60 -20 100 140 -40 120 TYPICAL EXAMPLE DISTRIBUTION LATCHING CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( LATCHING CURRENT, I H , (mA) -60 -20 100 140 -40 120 TYPICAL EXAMPLE DISTRIBUTION BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( -60 -20 100 140 -40 120 100 120 140 160 BREAKOVER VOLTAGE, (t BREAKOVER VOLTAGE, (25 x 100% COMMUTATION CHARACTERISTICS (TYPICAL) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT, (A/ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE, (V/ m T j = 125 o C I T = 4A t = 500 m s V D = 200v f = 3Hz MINIMUM CHARAC- TERISTICS VALUE V D t (dv/dt) c VOLTAGE WAVEFORM CURRENT WAVEFORM I T t (di/dt) c t III QUADRANT I QUADRANT GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH (TYPICAL) GATE CURRENT PULSE WIDTH, t w , ( m GATE TRIGGER CURRENT, (t w GATE TRIGGER CURRENT, (DC) x 100% T j = 25 C I RGT I , I RGT I I FGT I GATE TRIGGER CHARACTERISTICS TEST CIRCUITS TEST PROCEDURE I TEST PROCEDURE II R G V A V R G V TEST PROCEDURE III A V R G V A V