CR3KM-12 RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • IT (AV) : 3 A
  • VDRM : 600 V
  • IGT : 100 µA
  • Viso : 2000 V
  • Insulated Type
  • Glass Passivation Type
  • UL Recognized : Yellow Card No. E223904 F i l e N o . E 8 0 2 7 1 Outline (Package name: TO-220FN) 1. Cathode 2. Anode 3. Gate

Applications

TV sets, control of household equipment such as electric blanket, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol 12 Unit Repetitive peak reverse voltage V RRM 600 V Non-repetitive peak reverse voltage V RSM 720 V DC reverse voltage V R (DC) 480 V Repetitive peak off-state voltageNote1 V DRM 600 V DC off-state voltageNote1 V D (DC) 480 V

Rev.2.00, Mar.28.20 05, page 2 of 7 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 4.7 A Average on-state current I T (AV) 3.0 A Commercial frequency, sine half wave 180° conduction, Tc = 103°C Surge on-state current I TSM 70 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I 2t 24.5 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P GM 0.5 W Average gate power dissipation P G (AV) 0.1 W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM 0.3 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 2.0 g Typical value Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute, each terminal to case Notes: 1. With gate to cathode resistance R GK = 220 Ω .

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 2.0 mA Tj = 125°C, VRRM applied, RGK = 220 Ω Repetitive peak off-state current I DRM — — 2.0 mA Tj = 125°C, VDRM applied, RGK = 220 Ω On-state voltage V TM — — 1.6 V Tc = 25°C, ITM = 10 A, instantaneous value Gate trigger voltage V GT — — 0.8 V Tj = 25 °C, VD = 6 V, IT = 0.1 A Gate non-trigger voltage V GD 0.1 — — V Tj = 125°C, VD = 1/2 VDRM RGK = 220 Ω Gate trigger current I GT 1 — 100 Note3 µA Tj = 25 °C, VD = 6 V, IT = 0.1 A Thermal resistance R th (j-c) — — 4.1 °C/W Junction to case Note2 Notes: 2. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. 3. If special values of I GT are required, choose item D or E from those listed in the table below if possible. Item B C D E IGT (µA) 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 220 Ω resistance between the gate and cathode.

Rev.2.00, Mar.28.20 05, page 3 of 7 Performance Curves Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature (°C) Gate Voltage (V) Gate Current (mA) Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) Gate Characteristics × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 23 7 51 0 1 10242 3 7 54 100 102 101 100 10–1 100 5757 1 0 023 57 1 0123 57 1 0223 2310–1 10–1 101 102 12060–20–40 0 20 40 80 100 103 102 101 100 # 2 # 1 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 100 2310–3 57 1 0–2 23 57 1 0 –1 23 57 1 0 0 102 101 10–1 1.0 0.7 0.6 0.3 0.2 0 120–40 –20 20 80 0.1 0.5 0.4 0.8 0.9 06 0 40 100 Tc = 25°C VGD = 0.1V PGM = 0.5W PG(AV) = 0.1W VFGM = 6V VGT = 0.8V IFGM = 0.3A IGT = 100µA (Tj = 25°C) IGT (25°C) # 1 45µA # 2 18µA Typical Example Distribution Typical Example

Rev.2.00, Mar.28.20 05, page 4 of 7 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Case Temperature (°C) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) Case Temperature (°C) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Ambient Temperature (°C) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Ambient Temperature (°C) Average On-State Current (A) θ = 30° 60° 120° 90° 180° 160 120 140 100 θ = 30° 120°60° 90° 180° 160 120 140 100 0 1.6 θ = 180° 90° 120° 60° 30° 0 5.0 0 4.01.0 2.0 3.0 θ = 30° 60° 90° 180° 120° 160 120 140 100 160 120 140 100 θ = 180° 90° 120° 60° 30° θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Natural convection θ θ 360° Resistive loads θ θ 360° Resistive loads θ θ 360° Resistive loads Natural convection

Rev.2.00, Mar.28.20 05, page 5 of 7 Breakover Voltage vs. Junction Temperature Junction Temperature (°C) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%)Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) – 4 0 – 2 00 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 160 100 120 140 16060–20–40 0 20 40 80 100120 140 102 101 100 10–1 10–1 101 100 25 7 7 101 100 102 43 25 43 2310–1 571 0 0 23 57 1 0 1 23 57 1 0 2 400 200 250 300 350 100 150 # 2 # 1 Turn-On Time vs. Gate Current Turn-On Time (µs) Gate Current (mA) Turn-Off Time vs. Junction Temperature Turn-Off Time (µs) Junction Temperature (°C) Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Repetitive Peak Reverse Voltage vs. Junction Temperature –40–20 0 20 40 60 80 100120140160 160 100 120 140 0 1600 40 80 120 14020 60 100 Typical Example RGK = 220Ω Distribution VD = 12V RGK = 1kΩ Typical Example Typical Example IGT(25°C) 25µA# 1 50µA# 2 IGT(25°C) # 33µA Typical Example VD = 100V Ta = 25°C VD = 50V, VR = 50V dv/dt = 5V/µs IT = 2A Typical Example Distribution Typical Example

Rev.2.00, Mar.28.20 05, page 6 of 7 Gate Trigger Current vs. Gate Current Pulse Width × 100 (%)Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Current Pulse Width (µs) 102 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 104 103 101 Typical Example 0.1s tw

Rev.2.00, Mar.28.20 05, page 7 of 7 Package Dimensions − 2.0g MASS[Typ.] TO-220FNPRSS0003AB-A RENESAS CodeJEITA Package Code Package Name Unit: mm φ3.2 ± 0.2 2.8 ± 0.2 10 ± 0.3 1.1 ± 0.2 6.5 ± 0.3 3 ± 0.33.6 ± 0.3 15 ± 0.314 ± 0.5 1.1 ± 0.2 4.5 ± 0.2 2.6 ± 0.2 Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Tube 50 Type name CR3KM-12 Lead form Tube 50 Type name – Lead forming code CR3KM-12-A8 Note : Please confirm the specificat ion about the shipping in detail.

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