CR3CS-12A RENESAS | Alldatasheet
Document overview
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Technical content
Features
- IT (AV) : 3 A
- VDRM : 600 V
- IGT: 100 A
- Tj: 125°C
- Planar Passivation Type Outline Application Igniter, pulse generator, electric tools, etc. Maximum Ratings Parameter Symbol Voltage class Unit Repetitive peak reverse voltage VRRM 600 V Non-repetitive peak reverse voltage VRSM 720 V Repetitive peak off-state voltage Note1 VDRM 600 V Notes: 1. With gate to cathode resistance RGK = 220 Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 4.7 A Average on-state current IT (AV) 3 A Commercial frequency, sine half wave 180conduction, Tc = 110C Note2 Surge on-state current ITSM 70 A 50 Hz sinewave 1 full cycle, peak value, non-repetitive I2t for fusing I2t 24.5 A2s Value corresponding to 1 cycle of half wave
50 Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W Average gate power dissipation PG (AV) 0.1 W Peak gate reverse voltage VRGM 6 V Peak gate forward current IFGM 0.3 A Junction temperature Tj –40 to +125 C Storage temperature Tstg –40 to +125 C (Package name: TO-263) 2, 4 1. Cathode 2. Anode 3. Gate 4. Anode (Package name: TO-262) 1 2 3 1 2 3 R07DS1460EJ0100 Rev.1.00 Oct. 10, 2019
R07DS1460EJ0100 Rev.1.00 Page 2 of 7 Oct. 10, 2019
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current IRRM — — 2.0 mA Tj = 125C, VRRM applied RGK = 220 Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125C, VDRM applied RGK = 220 On-state voltage VTM — — 1.6 V Tc = 25C, ITM = 10 A instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25C, VD = 6 V, IT = 0.1A Gate non-trigger voltage VGD 0.1 — — V Tj = 125C, VD = 1/2 VDRM RGK = 220 Gate trigger current IGT 1 — 100 A Tj = 25C, VD = 6 V, IT = 0.1A Holding current IH — 3 — mA Tj = 25C, VD = 12 V RGK = 220 Thermal resistance Rth (j-c) — — 2.5 C/W Junction to case Note2 Notes: 2. Case temperature is measured on the anode tab.
R07DS1460EJ0100 Rev.1.00 Page 3 of 7 Oct. 10, 2019 Performance Curves 103 102 100 101 -40 0 40 80 120 160 Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) 100 40 1 2 3 Gate Trigger Current vs. Junction Temperature Junction Temperature ( C) Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance ( C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature ( C) Tc = 25 C VD = 6V RL = 60 102 101 100 100 10-210-3 10-1 100 101 102 100 10-1 101 10210-1 Typical Distribution Typical Example 1.0 0.8 0.6 0.4 0.2 - 40 0 40 80 120 160 VD = 6V RL = 60 Typical Example Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C)×100 (%) Gate Voltage (V) Gate Current (mA) Gate Characteristics VFGM = 6V VGT = 0.8V IGT = 100A (Tj = 25°C) VGD = 0.1V 10-1 100 101 102 102 101 100 10-1 PGM = 0.5W IFGM = 0.3A PG(AV) = 0.1W 103
R07DS1460EJ0100 Rev.1.00 Page 4 of 7 Oct. 10, 2019 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Case Temperature ( C) Average On-State Current (A) 00 2 51 q = 30° 60° 120° 90° 180° 160 120 140 100 00 2 51 q q 360° Resistive, inductive loads 360° Resistive, inductive loads -40 0 40 80 120 160 160 100 140 120 Breakover Voltage vs. Junction Temperature Junction Temperature ( C) 100 (%)Breakover Voltage (Tj = t C) RGK = 220Typical Example Breakover Voltage (Tj = 25 C) 3 3 120°60° q = 180°90°30° Junction Temperature ( C) 100 (%)Repetitive Peak Reverse Voltage (Tj = t C) Repetitive Peak Reverse Voltage vs. Junction Temperature 160 100 120 140 Typical Example - 40 0 40 80 120 160 Repetitive Peak Reverse Voltage (Tj = 25 C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/s) 100 (%)Breakover Voltage (dv/dt = v V/s) 160 120 140 100 Tj = 125 C RGK = 220 Typical Example 101 102 103 104 Breakover Voltage (dv/dt = 1 V/s) 4 4 Junction Temperature (°C) Repetitive Peak Off-State Current (Tj = 25°C)×100 (%) Repetitive Peak Off-State Current vs. Junction Temperature -40 0 40 80 120 Typical Example 106 105 104 103 102 Repetitive Peak Off-State Current (Tj = t°C) 160 RGK = 220
R07DS1460EJ0100 Rev.1.00 Page 5 of 7 Oct. 10, 2019 Typical Distribution Typical Example -40 0 40 80 120 160 VD = 12V Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature ( C) 102 101 100 10-1 Gate Trigger Current vs. Gate Current Pulse Width 100 (%)Gate Trigger Current (tw) Gate Current Pulse Width (s) Typical Example 104 103 102 101 102 103100 101 VD = 6V RL = 60 Ta = 25 C Gate Trigger Current (DC) RGK = 220
R07DS1460EJ0100 Rev.1.00 Page 6 of 7 Oct. 10, 2019 Package Dimensions Package Name: TO-263 Package Name: TO-262 1.4 g MASS[Typ.] PRSS0004AS-A RENESAS CodeJEITA Package Code Previous CodePackage Name TO-263 - TO-263A A b c D E e H L 4.20 0.00 0.65 1.12 0.381 1.15 8.50 6.90 10.05 8.00 15.00 1.90 4.78 Min Nom Dimensions in millimetersReference Symbol Max
2.54 BSC
0.25 BSC
4.60 0.255 0.95 1.42 0.737 1.40 9.10 7.50 10.65 8.80 15.60 2.50 1.70 1.78 5.28 E A D L GAUGE PLANE H L1L2 2x b2 2x b A e H c
0.25 A BMM
B 1.4 g MASS[Typ.] PRSS0004AR-A RENESAS CodeJEITA Package Code Previous CodePackage Name TO-262 - TO-262A A D e H L 4.200 2.050 0.640 1.140 0.330 8.500 12.900 Min Nom Dimensions in millimetersReference Symbol Max 4.600 2.750 1.400 9.650 23.850 14.100 4.800 1.727 A E DL e
0.25 A BM
H A B b1 0.635 1.400 E 9.650 10.370 4.400 2.400 1.050 0.750 0.880 1.300 0.500 0.600 9.250 10.000 13.500 4.550 1.100
R07DS1460EJ0100 Rev.1.00 Page 7 of 7 Oct. 10, 2019
Ordering Information
Orderable Part Number Package Packing Note3 Quantity Remark CR3CS-12A-T1#BH0 TO-263 Embossed tape 800 pcs. Taping direction “T1” CR3CS-12A-T2#BH0 TO-263 Embossed tape 800 pcs. Taping direction “T2” CR3CS-12A-A1#BH0 TO-262 Tube 50 pcs. Notes: 3. Please confirm the specification about the shipping in detail.
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