CR3AS-8ME RENESAS | Alldatasheet
Document overview
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Technical content
Features
- IT (AV) : 3 A
- VDRM : 400 V
- IGT: 30 mA
- Planar Passivation Type
- RoHS Compliant Outline Application Igniter, pulse generator, electric tools, etc. Maximum Ratings Parameter Symbol Voltage class Unit Repetitive peak reverse voltage VRRM 400 V Non-repetitive peak reverse voltage VRSM 500 V Repetitive peak off-state voltage VDRM 400 V Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 4.7 A Average on-state current IT (AV) 3 A Commercial frequency, sine half wave 180conduction, Tc = 95C Note1 Surge on-state current ITSM 70 A 60 Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I2t 20 A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Peak gate power dissipation PGM 3 W Average gate power dissipation PG (AV) 0.5 W Peak gate forward voltage VFGM 10 V Peak gate reverse voltage VRGM 10 V Peak gate forward current IFGM 0.5 A Junction temperature Tj –40 to +125 C Storage temperature Tstg –40 to +125 C (Package name: MP-3A) 2 3 2, 4 1. Cathode 2. Anode 3. Gate 4. Anode R07DS1230EJ0200 Rev.2.00 May. 10, 2019
R07DS1230EJ0200 Rev.2.00 Page 2 of 6 May. 10, 2019
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current IRRM — — 2.5 mA Tj = 125C, VRRM applied Repetitive peak off-state current IDRM — — 2.5 mA Tj = 125C, VDRM applied On-state voltage VTM — — 2.0 V Tc = 25C, ITM = 3 A, instantaneous value Gate trigger voltage VGT — — 2.0 V Tj = 25C, VD = 6 V, IT = 1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM Gate trigger current IGT 1 — 30 mA Tj = 25C, VD = 6 V, IT = 1 A Holding current IH — 30 — mA Tj = 25C, VD = 12 V Thermal resistance Rth (j-c) — — 2.8 C/W Junction to case Note1 Notes: 1. The measurement point for case temperature is at anode tab.
R07DS1230EJ0200 Rev.2.00 Page 3 of 6 May. 10, 2019 Performance Curves 103 102 100 101 -40 0 40 80 120 160 Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) 100 40 1 2 3 Gate Trigger Current vs. Junction Temperature Junction Temperature ( C) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Transient Thermal Impedance ( C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature ( C) Junction to ambient Junction to case Tc = 25 C VD = 6V RL = 6W 102 101 100 100 10-210-3 10-1 100 100 101 102 103 102 103 101 100 101 10210-1 Typical Distribution Typical Example 2.0 1.0 - 40 0 40 80 120 160 VD = 6V RL = 6W Typical Example Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C)×100 (%) 101 10-1 100 101 102 103 104 Gate Characteristics Gate Current (mA) Gate Voltage (V) VFGM= 10V IFGM = 0.5A PGM = 3W VGT = 2V IGT VGD = 0.2V PG(AV) = 0.5W
R07DS1230EJ0200 Rev.2.00 Page 4 of 6 May. 10, 2019 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Case Temperature ( C) Average On-State Current (A) 00 2 51 q = 30° 60° 120° 90° 180° 160 120 140 100 00 2 51 q q 360° Resistive, inductive loads 360° Resistive, inductive loads -40 0 40 80 120 160 160 100 140 120 Breakover Voltage vs. Junction Temperature Junction Temperature ( C) 100 (%)Breakover Voltage (Tj = t C) Typical Example Breakover Voltage (Tj = 25 C) 3 3 120°60° q = 180°90°30° Junction Temperature ( C) 100 (%)Repetitive Peak Reverse Voltage (Tj = t C) Repetitive Peak Reverse Voltage vs. Junction Temperature 160 100 120 140 Typical Example - 40 0 40 80 120 160 Repetitive Peak Reverse Voltage (Tj= 25 C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/ms) 100 (%)Breakover Voltage (dv/dt = v V/ms) 160 120 140 100 Tj = 125 CTypical Example 101 102 103 104 Breakover Voltage (dv/dt = 1 V/ms) 4 4 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Average On-State Current (A) Ambient Temperature ( C) 160 120 140 100 0 2.00 0.5 1.0 1.5 q Natural convection 360° Resistive, inductive loads Aluminum substrate 25 x 25 x t0.7 mm 30°q= 90° 120° 60° 180°
R07DS1230EJ0200 Rev.2.00 Page 5 of 6 May. 10, 2019 Typical Distribution Typical Example -40 0 40 80 120 160 VD = 12V Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature ( C) 103 102 101 100 Typical Distribution Typical Example -40 0 40 80 120 160 VD = 50V Turn-off Time vs. Junction Temperature Turn-off Time (ms) Junction Temperature ( C) 102 101 100 10-1 IT = 2A = VR dv/dt = 10V/ms
R07DS1230EJ0200 Rev.2.00 Page 6 of 6 May. 10, 2019 Package Dimensions Package Name: MP-3A
Ordering Information
Orderable Part Number Package Packing Note2 Quantity Remark CR3AS-8ME-T13#B00 MP-3A Embossed tape 3000 pcs. CR3AS-8ME#B00 MP-3A Tube 75 pcs. Tube packing is to be abolished. Note: 2. Please confirm the specification about the shipping in detail. 5.3±0.2 Unit: mm0.32 g MASS[Typ.] PRSS0004ZG-A RENESAS CodeJEITA Package Code Previous CodePackage Name MP-3A SC-63 TMP3 10.4Max 6.6 1±0.2 2.3 2.5Min 2.3 1 6.1±0.2 0.76±0.2 1Max 0.76 2.3±0.2 0.5±0.2 0.1±0.1 0.5±0.2 1.4±0.2
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