CR3AM KEXIN | Alldatasheet

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www.kexin.com.cn 1 Silicon Bidirectional Thyristors ■ Features

  • Blocking voltage to 400 V
  • General purpose bidirectional switching ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Repetitive peak off-state voltages VDRM,VRRM 400 V RMS on-state current IT(RMS) 3 A Non-repetitive peak on-state current ITSM 30 A Circuit Fusing Considerations (t = 8.3 ms) I2t A2s Peak Gate Voltage VGM 6 V Average Gate Power PG(AV) 0.3 W Peak Gate Power PGM 3 W Peak Gate Current IGM 0.5 A Operating Junction Temperature Range TJ -40 to 125 ℃ Storage Temperature Range Tstg -40 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Typ Max Unit Peak Repetitive Blocking Current IDRM, IRRM 2 Peak On- State Voltage VTM 1.5 V T2(+), G(+) 30 mA T2(+), G(-) mA T2(-), G(-) mA T2(-), G(+) - mA T2(+), G(+) 1.5 V T2(+), G(-) 1.5 V T2(-), G(-) 1.5 V T2(-), G(+) - V VD = Rated VDRM, VRRM ; Gate Open Test conditions IT=4.5 A, VD= 6 V, RL= ΩIGTGate trigger current VGTGate trigger voltage G ■ Marking Marking CR3AM ThyristorSMD Type 3.7 mA RG =330Ω 6 30 VD= 6 V, RL= Ω RG =330Ω DC Gate Non-trigger Voltage VGD VD=1/2VDRM 0.2 V CR3AM 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 1.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 0.50+0.15 -0.15 9.70+0.2 -0.2 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 5.55+0.15 -0.15 2.65+0.25 -0.1 1.50+0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm 1 2 3 1.T1 3.GATE 2.T2

www.kexin.com.cn 2 ■ Typical Characteristics ThyristorSMD Type 0.6 1.4 2.2 3.0 3.8 MAXIMUM ON-STATE CHARACTERISTICS INSTANTANEOUS ON-STATE CURRENT, I T , (AMPERES) INSTANTANEOUS ON-STATE VOLTAGE, V T , (VOLTS) T j = 25 o C MAXIMUM SURGE CURRENT FOLLOWING RATED LOAD CONDITIONS CYCLES AT 60 Hz MAXIMUM PEAK SURGE CURRENT, I TSM , (AMPERES) 100 110 120 130 ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) CASE TEMPERATURE, T C , ( 1.0 0.5 1.5 2.5 2.0 3.0 4.0 3.5 FOR AC CONTROL THIS GRAPH NEARLY APPLIES REGARDLESS OF THE CONDUCTION ANGLE CONDUCTION RESISTIVE, INDUCTIVE LOADS 100 120 140 160 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) AMBIENT TEMPERATURE, T a , ( 0.4 0.2 0.6 1.0 0.8 1.2 1.6 1.4 NATURAL CONVECTION, NO FIN CURVES APPLY REGARDLESS OF THE CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 0.5 1.0 1.5 2.0 2.5 3.5 4.0 5.0 MAXIMUM ON-STATE POWER DISSIPATION RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) MAXIMUM POWER DISSIPATION, (WATTS) 1.0 0.5 1.5 2.5 2.0 3.0 4.0 3.5 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( GATE TRIGGER CURRENT, (t GATE TRIGGER CURRENT, (25 x 100% -60 -20 100 140 -40 120 I FGT I I RGT III I RGT I TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION-TO-CASE, JUNCTION-TO-AMBIENT) CYCLES AT 60 Hz TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Z th(j-a) , ( C/WATT) JUNCTION-TO-AMBIENT JUNCTION- TO-CASE 100 110 120 130 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS) , (AMPERES) AMBIENT TEMPERATURE, T a , ( 1.0 0.5 1.5 2.5 2.0 3.0 4.0 3.5 RESISTIVE, INDUCTIVE LOADS 50 x 50 x t 1.2 30 x 30 x t 1.2 FIN: A PLATE PAINTED BLACK WITH GREASE CURVES APPLY REGARDLESS OF THE CONDUCTION ANGLE GATE CHARACTERISTICS (I, II, III) GATE CURRENT, I G , (mA) GATE VOLTAGE, V G , (VOLTS) V GT I GM = 0.5A P GM = 3W P G(avg) = 0.3W I RGT I, I FGT I, I RGT III V GD = 0.2V 360 CR3AM

www.kexin.com.cn 3 ThyristorSMD Type GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( GATE TRIGGER VOLTAGE, (t GATE TRIGGER VOLTAGE, (25 x 100% -60 -20 100 140 -40 120 HOLDING CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( HOLDING CURRENT, I H , (mA) -60 -20 100 140 -40 120 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( -60 -20 100 140 -40 120 100 120 140 160 BREAKOVER VOLTAGE, (t BREAKOVER VOLTAGE, (25 x 100% BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (TYPICAL) RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/ m 100 120 140 160 BREAKOVER VOLTAGE, (dv/dt = x V/ m BREAKOVER VOLTAGE, (dv/dt = 1V/ m x 100% T j = 125 C I QUADRANT III QUADRANT REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, T j , ( -60 -20 100 140 -40 120 REPETITIVE PEAK OFF-STATE CURRENT, (t REPETITIVE PEAK OFF-STATE CURRENT, (25 x 100% COMMUTATION CHARACTERISTICS (TYPICAL) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT, (A/ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE, (V/ m T j = 125 o C I T = 4A t = 500 m s V D = 200v f = 3Hz MINIMUM CHARAC- TERISTICS VALUE V D t (dv/dt) c VOLTAGE WAVEFORM CURRENT WAVEFORM I T t (di/dt) c t III QUADRANT I QUADRANT GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH (TYPICAL) GATE CURRENT PULSE WIDTH, t w , ( m GATE TRIGGER CURRENT, (t w GATE TRIGGER CURRENT, (DC) x 100% T j = 25 C I FGT I I RGT III I RGT I GATE TRIGGER CHARACTERISTICS TEST CIRCUITS TEST PROCEDURE I TEST PROCEDURE II R G V A V R G V TEST PROCEDURE III A V R G V A V CR3AM