CR2PM-8UE RENESAS | Alldatasheet
Document overview
- PDF pages: 6
Technical content
Features
- IT (AV) : 2 A
- VDRM : 400 V
- IGT: 100 µA
- Planar Type Outline (Package name: TO-220F(2) ) 1. Cathode 2. Anode 3. Gate Maximum Ratings Parameter Symbol Voltage class Unit 8 Repetitive peak reverse voltage VRRM 400 V Non-repetitive peak reverse voltage VRSM 500 V Repetitive peak off-state voltage Note1 VDRM 400 V Notes: 1. With gate to cathode resistance RGK = 1 kΩ Parameter Symbol Ratings Unit Conditions RMS on-state current IT(RMS) 4 A Average on-state current IT(AV) 2 A Commercial frequency, sine half wave 180° conduction, Tc = 98°C Surge on-state current ITSM 20 A 60Hz sine half wave, 1full cycle, peak value, non-repetitive I2t for fusing I2t 1.7 A 2s Value corresponding to 1cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 0.5 W Average gate power dissipation P G(AV) 0.1 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 6 V Peak gate forward current IFGM 0.2 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 2.0 g Typical value R07DS1160EJ0200 Rev.2.00 Dec 24, 2014 Not Recommended for New Design
R07DS1160EJ0200 Rev.2.00 Page 2 of 5 Dec 24, 2014
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 0.1 mA Tj = 125 °C, VRRM applied RGK = 1 kΩ Repetitive peak off-state current I DRM — — 0.1 mA Tj = 125 °C, VDRM applied RGK = 1 kΩ On-state voltage VTM — — 2.2 V Tj = 25°C, I TM = 4 A instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25°C, V D = 6 V, IT = 0.1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, V D = 1/2 VDRM RGK = 1 kΩ Gate trigger current IGT 1 — 100 µA Tj = 25 °C, VD = 6 V, IT = 0.1 A Holding current IH — — 3.0 mA Tj = 25 °C, VD = 12 V RGK = 1 kΩ Thermal resistance Rth(j-c) — — 5.6 °C/W Junction to case Note2 Notes: 2. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. Not Recommended for New Design
R07DS1160EJ0200 Rev.2.00 Page 3 of 5 Dec 24, 2014 Performance Curves Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) Gate Voltage (V) Gate Current (mA) Gate Characteristics 100 101 102 VFGM = 6V VGT = 0.8V (Tj = 25°C) IGT = 100μA (Tj = 25°C) PGM = 0.5W VGD = 0.2V IFGM = 0.2A PG(AV) = 0.1W 102 101 100 10−1 100 101 10210−1 Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) 40123 101 100 10−1 10−2 Tj = 125°C Tj = 25°C –40 0 40 80 120 160 Junction Temperature (°C) × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Typical Example 103 102 101 100 Gate Trigger Current vs. Junction Temperature –40 0 40 80 120 160 Gate Trigger Voltage vs. Junction Temperature Junction Temperature (°C) × 100 (%)Gate Trigger Voltage(Tj = t°C) Gate Trigger Voltage (Tj = 25°C) Typical Example 103 102 101 100 –40 0 40 80 120 160 Holding Current vs. Junction Temperature Junction Temperature (°C) × 100 (%)Holding Current (Tj = t°C) Holding Current (Tj = 25°C) Typical Example 103 102 101 100 VD=12V RGK=1kΩ Not Recommended for New Design
R07DS1160EJ0200 Rev.2.00 Page 4 of 5 Dec 24, 2014 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) 0 5 40 123 θ =30° 60° θ 360° Resistive, inductive loads90° 120° 180° Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Case Temperature (°C) 160 120 140 100 0 5 40 12 3 θ 360° Resistive, inductive loads θ =30° 60° 120° 90° 180° Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Ambient Temperature (°C) Average On-State Current (A) 1.50 0.5 1.0 160 120 140 100 60° 120° 180° θ =30 ° 90° θ 360° Resistive, inductive loads Transient Thermal Impedance (˚C/W) Maximum Transient Thermal Impedance Characteristics (Junction to Case) Time (s) 102 101 100 10−1 100 10110−3 10−2 10−1 Not Recommended for New Design
R07DS1160EJ0200 Rev.2.00 Page 5 of 5 Dec 24, 2014 Package dimensions SC-67 2.0g MASS[Typ.] T220F(2)PRSS0003AA-B RENESAS CodeJEITA Package Code Previous Code Unit: mm 10.5Max 1.5Max φ3.2 ± 0.2 0.8 2.54 0.5 2.62.54 5.2 2.8 13.5Min 17 5.0 8.5 1.2 3.6 4.5 Package Name TO-220F(2)
Ordering Information
Orderable Part Number Packing Quantity Remark CR2PM-8UE#B00 Bag 100 pcs. Straight type CR2PM-8UE-#B00 Tube 50 pcs. :Lead forming type Note : Please confirm the specificat ion about the shipping in detail. Not Recommended for New Design
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