CR08AS

CR08AS KEXIN | Alldatasheet

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IT(AV) :0.8A VDRM :400V/600V IGT :100 A Absolute Maximum Ratings Ta = 25 tinU21-SA80RC8-SA80RClobmySretemaraP VegatlovesreverkaepevititepeR RRM 400 600 V Vegatlovesreverkaepevititeper-noN RSM 500 720 V VegatlovesreverCD R(DC) 320 480 V V1*egatlovetats-ffokaepevititepeR DRM 400 600 V V1*egatlovetats-ffoCD D(DC) 320 480 V RMS on-state current IT(RMS) A Itnerrucetats-noegarevA T(AV) A Itnerrucetats-noegruS TSM A I2t for fusing I2 At 2s Peak gate power dissipation PGM W Average gate power dissipation PG(AV) W VegatlovdrawrofetagkaeP FGM V Peak gate reverse voltage VRGM V Peak gate forward current IFGM A Junction temperature Tj Storage temperature Tstg *1 With Gate-to-cathode resistance RGK=1k 0.3 -40 to +125 -40 to +125 0.5 0.1 1.26 0.8 0.42 1.GATE 2.ANODE 3.CATHODE 1.70 0.1 0.42 0.1 0.46 0.1

www.kexin.com.cn Electrical Characteristics Ta = 25 tinUxaM.pyTniMsnotiidnoctseTlobmySretemaraP Repetitive peak reverse current IRRM Tj=125 , VRRM applied,RGK=1k 0.5 mA Repetitive peak off-state current IDRM Tj=125 , VDRM applied, RGK=1k 0.5 mA Vegatlovetats-nO TM Ta=25 , ITM=2.5A, instantaneous value 1.5 V VegatlovreggirtetaG GT Ta=25 , VD=6V, IT=0.1A*1 0.8 V Vegatlovreggirt-nonetaG GD Tj=125 , VD=1/2VDRM, RGK=1k 0.2 V ItnerrucreggirtetaG GT Tj=25 , VD=6V, IT=0.1A *1 1 100 *2 A ItnerrucgnidloH H Tj=25 , VD=12V, RGK=1k 1.5 3 mA RecnatsiserlamrehT th (j-a) 56tneibmaotnoitcnuJ W *1 IGT, VGT measurement circuit. *2 If special values of IGT are required, choose at least two items from those listed in the table below. Item A B C IGT ( A) 1 to 30 20 to 50 40 to 100 CR08AS Marking NO. CRO8AS-8 CRO8AS-12 Marking AD AF 100 2 3 5 7 101 2 3 5 7 1024 4 5410 2 3 102 101 100 10–1 Ta = 25°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz)

3www.kexin.com.c n CR08AS 102 10–2 100 101 10–1 100 10–223 57 23 57 10123 57 10223 57 2310–1 VFGM = 6V VGT = 0.8V IGT = 100µA (Tj = 25°C) PGM = 0.5W PG(AV) = 0.1W VGD = 0.2V IFGM = 0.3A 16060–20–40 0 20 40 80 100120140 103 102 101 100 TYPICAL EXAMPLE 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120–40 –20 20 80 0.2 0.5 0.9 0 6040 100 TYPICAL EXAMPLE DISTRIBUTION 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 θ 360° 180° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 2 3100 5 7 101 2 3 5 7 102 2 3 5 7 103 101 2 310–3 5 710–2 2 3 5 710–1 2 3 5 7 100 103 102 100 ALUMINUM BOARD WITH SOLDERING 25 25 t0.7 160 120 140 100 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD WITH SOLDERING 25 25 t0.7 GATE CHARACTERISTICS 100 (%)GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C)

4 www.kexin.com.c n ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) 160 120 140 100 θ 360° θ = 180° 65°C/W 90°C/W Rth(j – a) = 200°C/W NATURAL CONVECTION RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 RGK = 1kΩ TYPICAL EXAMPLE 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.60 180° θ θ 360° RESISTIVE LOADS 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 θ = 30° 60° 120° 90° 180° 270° DC θ 360° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AMBIENT TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) 160 120 140 100 θ θ 360° θ = 30° 120° 90° 180° 60° RESISTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD WITH SOLDERING 25 25 t0.7 160 120 140 100 DC θ = 30° 120° 180° 270°60° 90° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD WITH SOLDERING 25 25 t0.7

5www.kexin.com.c n 101100 102 4.0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 2 310–1 5 7 100 2 3 5 7 101 2 3 5 7 1020 100 120 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (kΩ) 100 (%)BREAKOVER VOLTAGE (RGK = rkΩ) BREAKOVER VOLTAGE (RGK = 1kΩ) 2 3100 5 7 101 2 3 5 7 102 2 3 5 7 103 160 100 120 140

20 Tj = 125°C

RGK = 1kΩ TYPICAL EXAMPLE 2 310–1 5 7 100 2 3 5 7 101 2 3 5 7 102 500 300 400 100 200 100 2 310–1 5 7 100 2 3 5 7 101 2 3 5 7 102 102 101 10–1 VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C TYPICAL EXAMPLE 60–20–40–60 0 20 40 80 100120140 101 100 10–1 10–2 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (kΩ) 100 (%)HOLDING CURRENT (RGK = rkΩ) HOLDING CURRENT (RGK = 1kΩ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv /dt = vV/ µs) BREAKOVER VOLTAGE (dv /dt = 1V/ µs) TURN-ON TIME VS. GATE CURRENT TURN-ON TIME (µs) GATE CURRENT (mA) HOLDING CURRENT VS. GATE TRIGGER CURRENT HOLDING CURRENT (mA) GATE TRIGGER CURRENT (µA) DISTRIBUTION IGT (25°C) = 35µA RGK = 1kΩ TYPICAL EXAMPLE # 1 Tj = 25°C Tj = 25°C TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 25µA 0.9mA

6 www.kexin.com.c n 0 1600 40 80 120 14020 60 100 VD = 50V, VR = 50V IT = 2A, RGK = 1kΩ TYPICAL EXAMPLE DISTRIBUTION TURN-OFF TIME VS. JUNCTION TEMPERATURE TURN-OFF TIME (µs) JUNCTION TEMPERATURE (°C) 160 120 100 0 160–40–20 20 80 140120 140 0 6040 100 TYPICAL EXAMPLE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) THERMAL IMPEDANCE VS. BOARD DIMENSIONS THERMAL IMPEDANCE (°C/W) BOARD DIMENSIONS (mm) REGULAR SQUARE ONE SIDE 320 240 120 280 200 160 0 800 20 40 60 7010 30 50 t0.7 ALUMINUM BOARD WITHOUT EPOXY PLATE 10×10 EPOXY PLATE WITH COPPER FOIL 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 102 100 1012 43 5 7 1022 43 5 7 104 103 101 Tj = 25°C TYPICAL EXAMPLE IGT (DC) # 1 10µA # 2 65µA# 1 # 2