CR05AS-8-ET14

CR05AS-8 RENESAS | Alldatasheet

Document overview

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• PDF pages: 9

Technical content

Features

• IT (AV) : 0.5 A
• VDRM : 400 V
• IGT : 100 µA
• Non-Insulated Type
• Planar Passivation Type Outline (Package name: UPAK) (Package name: SOT-89) LZZZ0004 2, 4 1. Cathode 2. Anode 3. Gate 4. Anode

Applications

Solid state relay, strobe flasher, igniter, and hybrid IC Maximum Ratings Voltage class Parameter Symbol 8 (Mark CD) Unit Repetitive peak reverse voltage V RRM 400 V Non-repetitive peak reverse voltage V RSM 500 V DC reverse voltage V R (DC) 320 V Repetitive peak off-state voltageNote1 V DRM 400 V DC off-state voltageNote1 V D (DC) 320 V

REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 2 of 8 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 0.79 A Average on-state current I T (AV) 0.5 A Commercial frequency, sine half wave 180° conduction, Ta = 57°CNote2 Surge on-state current I TSM 10 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I 2t 0.4 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P GM 0.1 W Average gate power dissipation P G (AV) 0.01 W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM 0.1 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 50 mg Typical value Notes: 1. With gate to cathode resistance R GK = 1 kΩ .

Electrical Characteristics

Rated value Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 0.1 mA Tj = 125°C, V RRM applied Repetitive peak off-state current I DRM — — 0.1 mA Tj = 125°C, VDRM applied, RGK = 1 kΩ On-state voltage V TM — — 1.9 V Ta = 25°C, ITM = 1.5 A, instantaneous value Gate trigger voltage V GT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 ANote4 Gate non-trigger voltage V GD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current I GT 20 — 100 Note3 µA Tj = 25°C, VD = 6 V, IT = 0.1 ANote4 Holding current I H — — 3 mA Tj = 25°C, VD = 12 V, RGK = 1 kΩ Thermal resistance R th (j-a) — — 70 °C/W Junction to ambient Note2 Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm). 3. If special values of I GT are required, choose item E from those listed in the table below if possible. Item B E IGT (µA) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 4. I GT, VGT measurement circuit. DC IGS IGT DC 60Ω VGT TUT 1kΩ RGK A3 A2 Switch Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ)

REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 3 of 8 Performance Curves Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature (°C) Gate Voltage (V) Gate Current (mA) Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) Gate Characteristics × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 25 7 1 0 1 102432 5 7 43 501 4 23 102 101 100 10–1 Ta = 25°C 102 10–2 100 101 101 10–1 100 10–2 23 57 23 5710–1 10223 57 23 57 VFGM = 6V VGT = 0.8V IGT = 100µA (Tj = 25°C) PGM = 0.1W VGD = 0.2V IFGM = 0.1A 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 160–40–20 20 80 140 120 0.2 0.5 0.9 06 0 40 100 60–20–40–60 0 20 40 80 100 120 140 103 102 101 100 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 101 2310–3 57 1 0–2 23 57 1 0 –1 23 57 1 0 0 103 102 100 25×25×t0.7 Aluminum Board PG(AV) = 0.01W Typical Example Distribution Typical Example

REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 4 of 8 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Ambient Temperature (°C)Ambient Temperature (°C) Ambient Temperature (°C) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 1.5 1.0 0.5 θ = 30° 60° 120° 90° 180° 270° DC 1.5 1.0 0.5 θ = 30° 60° 120° 90° 180° 160 120 140 100 0 0.80 0.2 0.4 0.6 θ = 30° 60° 120° 90° 180° 160 120 140 100 0 0.80 0.2 0.4 0.6 θ = 30° DC 270°60° 1.5 0.5 1.0 θ = 30° 60° 90° 180° 120° 160 120 140 100 0 0.8 0 0.2 0.4 0.6 θ = 30° 60° 120° 90° 180°θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Natural convection 25×25×t0.7 Aluminum Board 25×25×t0.7 Aluminum Board 25×25×t0.7 Aluminum Board θ θ 360° Resistive loads θ 360° Resistive, inductive loads θ θ 360° Resistive loads Natural convection θ 360° Resistive, inductive loads Natural convection 120° 180°90°

REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 5 of 8 Breakover Voltage vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) Breakover Voltage vs. Junction Temperature Junction Temperature (°C) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%)Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/µs) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 2310–1 57 1 00 23 5 7 1 0 1 23 5 7 1 0 2 120 100 23100 57 1 01 23 57 1 0 2 23 57 1 0 3 120 100 # 1 # 2 Typical Example # 1 IGT(25°C = 10µA) # 2 IGT(25°C = 66µA) Tj = 125°C, RGK = 1kΩ 60–20–40–60 0 20 40 80 100120 140 102 101 100 10–1 2310–1 571 00 23 5 7 1 0 1 23 5 7 1 0 2 500 200 300 400 100 # 1 # 2 160 120 100 0 160–40–20 20 80 140 120 140 06 0 40 100 Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Repetitive Peak Reverse Voltage vs. Junction Temperature RGK = 1kΩ Typical Example Typical Example Tj = 125°C Distribution Typical Example Tj = 25°C IH (25°C) = 1mA IGT(25°C) = 25µA Tj = 25°C Typical Example IGT(25°C) I H(1kΩ) 13µA1 . 6 m A 59µA1 . 8 m A # 1 # 2 Typical Example

REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 6 of 8 Gate Trigger Current vs. Gate Current Pulse Width × 100 (%)Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Current Pulse Width (µs) 102 223100 45 71 0 1 34 5 7 102 103 101 # 1 # 2 Tj = 25°C Typical Example IGT(25°C) 10µA 66µA # 1 # 2

REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 7 of 8 Package Dimensions 4.5 ± 0.1 1.8 Max 1.5 ± 0.1

0.44 Max

0.44 Max0.48 Max

0.53 Max

1.5 1.5 3.0 2.5 ± 0.1

4.25 Max

0.8 Min

φ 1 0.4 (1.5) (2.5)(0.4) (0.2) Previous Code PLZZ0004CA-A UPAK / UPAKV MASS[Typ.] 0.050gSC-62 RENESAS CodeJEITA Package Code Unit: mm Package Name UPAK SC-62 0.48g MASS[Typ.] SOT-89PLZZ0004CB-A RENESAS CodeJEITA Package Code Package Name Unit: mm 4.6Max 0.48Max 0.58Max 3.0 1.5 4.2Max 0.8Min 2.5 ± 0 0.4 +0.03 –0.05 0.8M ± 0.1 Max ± 0

REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 8 of 8 Order Code Lead form Standard packing Quantity Standard order code Standard order code example Surface-mounted type Taping 4000 Type name – ET +Direction (1 or 2) + 4 CR05AS-8-ET14 Note : Please confirm the specificat ion about the shipping in detail.

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