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Document overview
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- PDF pages: 9
Technical content
Features
- IT (AV) : 0.4 A
- VDRM : 600 V
- IGT: 100 μA
- Planar Type Outline PRSS0003EA-A (Package name: TO-92*) 1. Cathode 2. Anode 3. Gate PRSS0003DE-A (Package name: TO-92(3)) 123
Applications
Solid state relay, igniter, strobe flasher, circuit breaker, and general purpose control applications Maximum Ratings Parameter Symbol Voltage class Unit Repetitive peak reverse voltage VRRM 600 V Non-repetitive peak reverse voltage VRSM 720 V DC reverse voltage VR(DC) 480 V Repetitive peak off-state voltage Note1 V DRM 600 V DC off-state voltage Note1 V D(DC) 480 V Notes: 1. With gate to cathode resistance R GK=1 kΩ R07DS0636EJ0200 Rev.2.00 Aug 20, 2014
R07DS0636EJ0200 Rev.2.00 Page 2 of 8 Aug 20, 2014 Parameter Symbol Ratings Unit Conditions RMS on-state current IT(RMS) 0.63 A Average on-state current IT(AV) 0.4 A Commercial frequency, sine half wave 180° conduction, Ta=54°C Surge on-state current ITSM 10 A 60Hz sine half wave, 1full cycle, peak value, non-repetitive I2t for fusing I2t 0.4 A 2s Value corresponding to 1cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 0.5 W Average gate power dissipation P G(AV) 0.1 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 6 V Peak gate forward current IFGM 0.3 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 0.23 g Typical value
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 0.5 mA Tj = 125 °C, VRRM applied Repetitive peak off-state current I DRM — — 0.5 mA Tj = 125 °C, VDRM applied RGK=1 kΩ On-state voltage VTM — — 1.2 V Tj = 25°C, I TM = 1.2 A instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25°C, V D = 6 V, IT = 0.1 A Note3 Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, V D = 1/2 VDRM RGK = 1 KΩ Gate trigger current IGT 1 Note2 — 100 Note2 µA Tj = 25°C, V D = 6 V, IT = 0.1 A Note3 Holding current IH — 1.5 3 mA Tj = 25°C, V D = 12 V, RGK = 1 kΩ Thermal resistance Rth(j-a) — — 150 °C/W Junction to ambient Notes: 2. If special values of I GT are required, choose item D or E from those listed in the table below if possible. Item A B D E IGT (μA) 1 to 30 20 to 50 1 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3. I GT, VGT measurement circuit. DC IGS IGT DC 60Ω VGT 2 1 TUT 1kΩ RGK A3 A2 Switch Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ)
R07DS0636EJ0200 Rev.2.00 Page 3 of 8 Aug 20, 2014 Performance Curves 501234 102 101 100 100 101 10210−1 102 101 100 10−2 10−2 10−1 100 10−210−3 10−1 100 101 102 100 101 102 103 10−1 Ta = 25°C Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) IGT = 100μA (Tj = 25°C) VGD = 0.2V Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature (°C) Gate Voltage (V) Gate Current (mA) Gate Characteristics VFGM = 6V PGM = 0.5W VGT = 0.8V (Tj = 25°C) PG(AV) = 0.1W IFGM = 0.3V 103 102 101 100 103 102 101 100 Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 1600 40 80 120–40 Typical Example 1.0 0.8 0.6 0.4 120–40 –20 20 80 0.2 600 40 100 Distribution Typical Example
R07DS0636EJ0200 Rev.2.00 Page 4 of 8 Aug 20, 2014 θ = 30° 60° 120° 90° 180° θ = 30° 60° 120° 90° 180° Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 120 140 100 θ = 30° 120° 180° DC 270°60° 90° 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.80 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 θ = 30° 60° 120° 90° 180° 270° DC 160 120 140 100 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 160 120 140 100 θ = 30° 60° 120°90° 180° Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Ambient Temperature (°C)Ambient Temperature (°C)Ambient Temperature (°C) Average On-State Current (A) θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Natural convection θ θ 360° Resistive loads Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) θ 360° Resistive, inductive loads θ θ 360° Resistive loads Natural convection θ 360° Resistive, inductive loads Natural convection θ = 30° 60° 120° 90° 180°
R07DS0636EJ0200 Rev.2.00 Page 5 of 8 Aug 20, 2014 160 120 140 100 160 –40 0 408 0 120 Typical Example Breakover Voltage vs. Junction Temperature Junction Temperature (°C) RGK = 1kΩ × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) 100 120 Typical Example Tj = 125°C 10−1 100 101 102 Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/μs) × 100 (%) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) 160 100 120 140 Tj = 125°C RGK = 1kΩ Typical Example 100 101 102 103 101 100 10−1 10−2 Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature (°C) 60 8002 0 40–20–40 100 120140 RGK = 1kΩ IGT(25°C) = 35μA Typical ExampleDistribution 10−1 100 101 102 Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%)Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) 600 500 300 400 100 200 Typical Example Tj = 125°C 102 101 100 10−1 100 101 10210−1 Typical Example Turn-On Time vs. Gate Current Turn-On Time (μs) Gate Current (mA) VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C
R07DS0636EJ0200 Rev.2.00 Page 6 of 8 Aug 20, 2014 0 1600 408 0 1 2 0 1 4020 60 100 Distribution Turn-Off Time vs. Junction Temperature Turn-Off Time (μs) Junction Temperature (°C) VD = 50V, VR = 50V IT = 2A, RGK = 1kΩ 160 120 100 0–400 408 0 1 2 0 160 140 Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Repetitive Peak Reverse Voltage vs. Junction Temperature Typical Example 104 103 102 100 101 102 103101 Gate Trigger Current vs. Gate Current Pulse Width × 100 (%)Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Current Pulse Width (μs) Typical Example VD = 6V RL = 60Ω Ta = 25°C
R07DS0636EJ0200 Rev.2.00 Page 7 of 8 Aug 20, 2014 Package Dimensions SC-43A 0.23g MASS[Typ.] T920PRSS0003EA-A RENESAS CodeJEITA Package Code Previous Code Unit: mm φ5.0Max 4.4 3.6 11.5Min 5.0Max 1.25 Circumscribed circle φ0.7 1.25 1.1 Package Name TO-92* Previous Code TO-92(3)/TO-92(3)VSC-43A PRSS0003DE-A MASS[Typ.] 0.23g RENESAS CodeJEITA Package Code Unit: mm Package Name TO-92(3)
0.60 Max
0.55 Max
5.0 ± 0.2 0.7
2.3 Max
12.7 Min 0.42 Max 1.27 2.54
R07DS0636EJ0200 Rev.2.00 Page 8 of 8 Aug 20, 2014
Ordering Information
Orderable Part Number Packing Quantity Remark CR04AM-12A#B00 Bag 500 pcs. Straight Type, TO-92* CR04AM-12A-B#B00 Bag 500 pcs. Straight Type, TO-92*, IGT item:B CR04AM-12A-A6#B00 Bag 500 pcs. A6 Lead form, TO-92* CR04AM-12A-BA6#B00 Bag 500 pcs. A6 Lead form, TO-92*, IGT item:B CR04AM-12A-TB#B00 Adhesive Tape 2000 pcs. A8 Lead form, TO-92* CR04AM-12A-BTB#B00 Adhesive Tape 2000 pcs. A8 Lead form, TO-92*, IGT item:B CR04AM-12A#B10 (EOL) (EOL). Straight Type, TO-92(3) CR04AM-12A-B#B10 (EOL) (EOL). Straight Type, TO-92(3), I GT item:B Note : Please confirm the specificat ion about the shipping in detail.
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