CR04AM-12 RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • IT (AV) : 0.4 A
  • VDRM : 600 V
  • IGT : 100 µA
  • Glass Passivation Type Outline PRSS0003EA-A (Package name: TO-92) 1. Cathode 2. Anode 3. Gate

Applications

Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol 12 Unit Repetitive peak reverse voltage V RRM 600 V Non-repetitive peak reverse voltage V RSM 720 V DC reverse voltage V R (DC) 480 V Repetitive peak off-state voltageNote1 V DRM 600 V DC off-state voltageNote1 V D (DC) 480 V

Rev.2.00, Mar.01.20 05, page 2 of 7 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 0.63 A Average on-state current I T (AV) 0.4 A Commercial frequency, sine half wave 180° conduction, Ta = 54°C Surge on-state current I TSM 10 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I 2t 0.4 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P GM 0.5 W Average gate power dissipation P G (AV) 0.1 W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM 0.3 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 0.23 g Typical value Notes: 1. With gate to cathode resistance R GK = 1 kΩ .

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 0.5 mA Tj = 125°C, V RRM applied Repetitive peak off-state current I DRM — — 0.5 mA Tj = 125°C, VDRM applied, RGK = 1 kΩ On-state voltage V TM — — 1.2 V Ta = 25°C, ITM = 1.2 A, instantaneous value Gate trigger voltage V GT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 ANote3 Gate non-trigger voltage V GD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current I GT 1 — 100 Note2 µA Tj = 25°C, VD = 6 V, IT = 0.1 ANote3 Holding current I H — 1.5 3 mA Tj = 25°C, VD = 12 V, RGK = 1 kΩ Thermal resistance R th (j-a) — — 150 °C/W Junction to ambient Notes: 2. If special values of I GT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3. I GT, VGT measurement circuit. DC IGS IGT DC 60Ω VGT TUT 1kΩ RGK A3 A2 Switch Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ)

Rev.2.00, Mar.01.20 05, page 3 of 7 Performance Curves 100 23 5 7 1 0 1 23 5 7 1 0 244 501 4 23 102 101 100 10–1 Ta = 25°C Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) 102 10–2 100 101 10–1 100 10–223 57 23 57 10123 57 10223 57 2310–1 IGT = 100µA (Tj = 25°C) VGD = 0.2V 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 101 2310–3 57 1 0–2 23 57 1 0 –1 23 57 1 0 0 103 102 100 16060–20–40 0 20 40 80 100120 140 103 102 101 100 Typical Example 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120–40 –20 20 80 0.2 0.5 0.9 06 0 40 100 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature (°C) Gate Voltage (V) Gate Current (mA) Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) Gate Characteristics × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) VFGM = 6V PGM = 0.5W VGT = 0.8V (Tj = 25°C) PG(AV) = 0.1W IFGM = 0.3V Distribution Typical Example

Rev.2.00, Mar.01.20 05, page 4 of 7 160 120 140 100 θ = 30° 60° 120° 90° 180° 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 θ = 30° 60° 120° 90° 180° Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 160 120 140 100 θ = 30° 120° 180° DC 270°60° 90° 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 θ = 30° 60° 120° 90° 180° 270° DC 160 120 140 100 θ = 30° 60° 120°90° 180° Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Ambient Temperature (°C)Ambient Temperature (°C)Ambient Temperature (°C) Average On-State Current (A) θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Natural convection θ θ 360° Resistive loads Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) θ 360° Resistive, inductive loads θ θ 360° Resistive loads Natural convection θ 360° Resistive, inductive loads Natural convection θ = 30° 60° 120° 90° 180°

Rev.2.00, Mar.01.20 05, page 5 of 7 160 120 140 100 0 160 –40 0 40 80 120140–20 20 60 100 Typical Example 2310–1 571 0 0 23 57 1 0 1 23 57 1 0 20 100 120 Typical Example Breakover Voltage vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) Breakover Voltage vs. Junction Temperature Junction Temperature (°C) RGK = 1kΩ × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Tj = 125°C 100 4.0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 160 100 120 140 Typical Example 2310–1 571 0 0 23 57 1 0 1 23 57 25 37 2 5 37102 500 300 400 100 200 60–20–40–60 0 20 40 80 100120 140 101 100 10–1 10–2 Distribution Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%)Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/µs) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) Holding Current vs. Gate Trigger Current Holding Current (mA) Gate Trigger Current (µA) RGK = 1kΩ IGT(25°C) = 35µA Typical Example Tj = 25°C # 1 Typical Example IGT(25°C) I H(1kΩ) 25µA0 . 9 m A# 1 Tj = 25°C Tj = 125°C RGK = 1kΩ 101 102

Rev.2.00, Mar.01.20 05, page 6 of 7 100 2310–1 571 0 0 23 57 1 0 1 23 57 1 0 2 102 101 10–1 Typical Example 0 1600 40 80 120 14020 60 100 Distribution Turn-On Time vs. Gate Current Turn-On Time (µs) Gate Current (mA) Turn-Off Time vs. Junction Temperature Turn-Off Time (µs) Junction Temperature (°C) VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C VD = 50V, VR = 50V IT = 2A, RGK = 1kΩ 160 120 100 0 160–40–20 20 80 140120 140 06 0 40 100 102 100 101 10224 532 4 5 37 7 104 103 101 Gate Trigger Current vs. Gate Current Pulse Width × 100 (%)Gate Trigger Current (tw) Gate Trigger Current (DC) Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Gate Current Pulse Width (µs) # 1 # 2 Typical Example IGT(DC) 10µA 65µA # 1 # 2 Repetitive Peak Reverse Voltage vs. Junction Temperature Tj = 25°C Typical Example

Rev.2.00, Mar.01.20 05, page 7 of 7 Package Dimensions SC-43A 0.23g MASS[Typ.] TO-92PRSS0003EA-A RENESAS CodeJEITA Package Code Package Name Unit: mm φ5.0Max 4.4 3.6 11.5Min 5.0Max 1.25 Circumscribed circle φ0.7 1.25 1.1 Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack 500 Type name CR04AM-12 Lead form Vinyl sack 500 Type name – Lead forming code CR04AM-12-A6 Form A8 Taping 2000 Type name – TB CR04AM-12-TB Note : Please confirm the specificat ion about the shipping in detail.

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