CR03AM-12-TB

CR03AM-12 RENESAS | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• IT (AV) : 0.3 A
• VDRM : 600 V
• IGT : 100 µA
• Non-Insulated Type
• Glass Passivation Type Outline PRSS0003EA-A (Package name:TO-92) 1. Cathode 2. Anode 3. Gate

Applications

Leakage protector, timer, and gas igniter Maximum Ratings Voltage class Parameter Symbol 12 Unit Repetitive peak reverse voltage V RRM 600 V Non-repetitive peak reverse voltage V RSM 800 V DC reverse voltage V R(DC) 480 V Repetitive peak off-state voltageNote1 V DRM 600 V Non-repetitive peak off-state voltageNote1 V DSM 800 V DC off-state voltageNote1 V D(DC) 480 V

Rev.2.00, Mar.01.20 05, page 2 of 7 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 0.47 A Average on-state current I T (AV) 0.3 A Commercial frequency, sine half wave 180° conduction, Ta = 47°C Surge on-state current I TSM 20 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I 2t 1.6 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P GM 0.5 W Average gate power dissipation P G (AV) 0.1 W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM 0.3 A Junction temperature Tj – 40 to +110 °C Storage temperature Tstg – 40 to +125 °C Mass — 0.23 g Typical value Notes: 1. With gate to cathode resistance R GK = 1 kΩ .

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 0.1 mA Tj = 110°C, V RRM applied Repetitive peak off-state current I DRM — — 0.1 mA Tj = 110°C, VDRM applied, RGK = 1 kΩ On-state voltage V TM — — 1.8 V Ta = 25°C, ITM = 4 A, instantaneous value Gate trigger voltage V GT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 ANote3 Gate non-trigger voltage V GD 0.2 — — V Tj = 110°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current I GT 1 — 100 Note2 µA Tj = 25°C, VD = 6 V, IT = 0.1 ANote3 Holding current I H — 1.5 3 mA Tj = 25°C, VD = 12 V, RGK = 1 kΩ Thermal resistance R th (j-a) — — 180 °C/W Junction to ambient Notes: 2. If special values of I GT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3 I GT, VGT measurement circuit. DC IGS IGT DC 60Ω VGT TUT 1kΩ RGK A3 A2 Switch Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ)

Rev.2.00, Mar.01.20 05, page 3 of 7 Performance Curves Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature (°C) Gate Voltage (V) Gate Current (mA) Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) Gate Characteristics × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 101 100 10–1 10–2 100 25 1 0 1 37 1 0 242 5 37 4 102 10–2 100 101 101 10–1 100 57 23 5710–1 10223 57 23 52 3 57 VFGM = 6V VGT = 0.8V (Tj = 25°C) IGT = 100µA (Tj = 25°C) PGM = 0.5W VGD = 0.2V IFGM = 0.3A 2310–3 57 1 0–2 23 57 1 0 –1 23 57 1 0 0 200 100 120 140 160 180 2310 0 571 0 1 23 57 1 0 2 23 57 1 0 3 60–20–40 0 20 40 80 100 103 102 101 100 120 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0–60–40–20 20 80 140 120 0.2 0.5 0.9 06 0 40 100 IGT(25°C) = 35µA Ta = 25°C Typical Example Typical Example Distribution PG(AV) = 0.1W

Rev.2.00, Mar.01.20 05, page 4 of 7 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Ambient Temperature (°C) Ambient Temperature (°C)Ambient Temperature (°C) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Average Power Dissipation (W) Average On-State Current (A) 160 120 140 100 θ = 30° 60° 120° 90° 180° 0.3 0.2 0.1 0.4 0.5 θ = 30° 60° 120° 90° 180° 0.3 0.2 0.1 0.5 0.4 θ = 30° 60° 120°90° 180° 0.3 0.2 0.1 0.5 0.4 θ = 30° 60° 90° 180° 270° DC 120° 160 120 140 100 0 0.5 0 0.2 0.40.1 0.3 160 120 140 100 60° 120° 180°θ = 30° 90° θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Natural convection θ θ 360° Resistive loads θ θ 360° Resistive loads Natural convection θ 360° Resistive, inductive loads 120° 180° DC 270° 90° θ 360° Resistive, inductive loads Natural convection θ = 30° 60°

Rev.2.00, Mar.01.20 05, page 5 of 7 Breakover Voltage vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) Breakover Voltage vs. Junction Temperature Junction Temperature (°C) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%)Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/µs) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) 160 120 140 100 0 120–40 04 0 8 0–20 20 60 100 RGK = 1kΩ 2310–1 571 0 0 23 57 1 0 1 23 57 1 0 2 160 100 120 140 Tj = 110°C 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 200 180 100 120 160 140 Tj = 25°C RGK = 1kΩ Tj = 110°C 2310–2 10–157 2 3 571 0 0 23 5 7 1 0 1 100 200 300 400 500 160 120 140 100 0 120 –40 04 0 8 0–20 20 60 100 60–20–40–60 0 20 40 80 100120 140 102 101 100 10–1 RGK = 1kΩ IGT(25°C) = 35µA VD = 12V, Tj = 25°C # 2 # 1 Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Repetitive Peak Reverse Voltage vs. Junction Temperature Typical Example Typical Example Typical Example Typical Example Distribution Typical Example IGT(25°C) I H(1kΩ) 10µA 26µA 1.0mA 1.1mA # 1 # 2

Rev.2.00, Mar.01.20 05, page 6 of 7 Gate Trigger Current (µA) Gate Trigger Current vs. Gate Current Pulse Width Gate Current Pulse Width (µs) 102 23 4100 57 1 0 1 24 35 7 1 0 2 104 103 Tj = 25° C # 1 # 2 Typical Example IGT(DC) 16µA 65µA # 1 # 2

Rev.2.00, Mar.01.20 05, page 7 of 7 Package Dimensions SC-43A 0.23g MASS[Typ.] TO-92PRSS0003EA-A RENESAS CodeJEITA Package Code Package Name Unit: mm φ5.0Max 4.4 3.6 11.5Min 5.0Max 1.25 Circumscribed circle φ0.7 1.25 1.1 Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack 500 Type name CR03AM-12 Lead form Vinyl sack 500 Type name – Lead forming code CR03AM-12-A6 Form A8 Taping 2000 Type name – TB CR03AM-12-TB Note : Please confirm the specificat ion about the shipping in detail.

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