CR02AM-8-E

CR02AM-8 RENESAS | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• IT (AV) : 0.3 A
• VDRM : 400 V
• IGT : 100 µA
• Planar Passivation Type
• Completed Pb free product Outline (Package name: TO-92(3)) 1. Cathode 2. Anode 3. Gate

Applications

Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic equipment, strobe flasher, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol 8 Unit Repetitive peak reverse voltage V RRM 400 V Non-repetitive peak reverse voltage V RSM 500 V DC reverse voltage V R (DC) 320 V Repetitive peak off-state voltageNote1 V DRM 400 V DC off-state voltageNote1 V D (DC) 320 V

Rev.1.00, Mar.28.20 05, page 2 of 7 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 0.47 A Average on-state current I T (AV) 0.3 A Commercial frequency, sine half wave 180° conduction, Ta = 30°C Surge on-state current I TSM 10 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t for fusing I 2t 0.4 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P GM 0.1 W Average gate power dissipation P G (AV) 0.01 W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM 0.1 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 0.23 g Typical value Notes: 1. With gate to cathode resistance R GK = 1 kΩ .

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM — — 0.1 mA Tj = 125°C, V RRM applied Repetitive peak off-state current I DRM — — 0.1 mA Tj = 125°C, VDRM applied, RGK = 1 kΩ On-state voltage V TM — — 1.6 V Ta = 25°C, ITM = 0.6 A, instantaneous value Gate trigger voltage V GT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 ANote3 Gate non-trigger voltage V GD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current I GT 20 — 100 Note2 µA Tj = 25°C, VD = 6 V, IT = 0.1 ANote3 Holding current I H — — 3 mA Tj = 25°C, VD = 12 V, RGK = 1 kΩ Thermal resistance R th (j-a) — — 180 °C/W Junction to ambient Notes: 2. If special values of I GT are required, choose item E from those listed in the table below if possible. Item B E IGT (µA) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3. I GT, VGT measurement circuit. DC IGS IGT DC 60Ω VGT TUT 1kΩ RGK A3 A2 Switch Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ)

Rev.1.00, Mar.28.20 05, page 3 of 7 Performance Curves Maximum On-State Characteristics On-State Current (A) On-State Voltage (V) Rated Surge On-State Current Surge On-State Current (A) Conduction Time (Cycles at 60Hz) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Time (s) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Voltage (V) Junction Temperature (°C) Gate Voltage (V) Gate Current (mA) Gate Trigger Current vs. Junction Temperature Junction Temperature (°C) Gate Characteristics × 100 (%)Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 25 1 0 12 37 1 042 5 374 101 100 10–1 10–2 2310–3 57 1 0–2 23 57 1 0 –1 23 57 1 0 0 200 100 120 140 160 180 2310 0 571 0 1 23 57 1 0 2 23 57 1 0 3 102 10–2 100 101 101 10–1 100 10–2 23 57 23 5710–1 10223 57 23 57 VFGM = 6V VGT = 0.8V IGT = 100µA (Tj = 25°C) PGM = 0.1W PG(AV) = 0.01W VGD = 0.2V IFGM = 0.1A 14040–40–60 –20 0 20 60 80 100 120 103 102 101 100 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 160–40–20 20 80 140 120 0.2 0.5 0.9 06 0 40 100 Ta = 25°C Typical Example Distribution Typical Example

Rev.1.00, Mar.28.20 05, page 4 of 7 Maximum Average Power Dissipation (Single-Phase Half Wave) Average Power Dissipation (W) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Ambient Temperature (°C) Ambient Temperature (°C)Ambient Temperature (°C) Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Average Power Dissipation (W) Average On-State Current (A) 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.400 . 1 0 . 2 0 . 3 θ = 30° 60° 120° 90° 180° 160 120 140 100 0 0.4 0 0.1 0.2 0.3 θ = 30° 60° 120°90° 180° 160 120 140 100 θ = 30° 60° 120° 90° 180° DC 270° 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 θ = 30° 60° 120° 90° 180° DC 270° 160 120 140 100 θ = 30° 60° 120°90° 180° 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 θ = 30° 60° 120° 90° 180° θ θ 360° Resistive loads Natural convection θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Natural convection θ θ 360° Resistive loads θ 360° Resistive, inductive loads θ 360° Resistive, inductive loads Natural convection

Rev.1.00, Mar.28.20 05, page 5 of 7 Breakover Voltage vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) Breakover Voltage vs. Junction Temperature Junction Temperature (°C) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Holding Current vs. Junction Temperature Holding Current (mA) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (kΩ) × 100 (%)Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/µs) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 2310–1 571 0 0 23 57 1 0 1 23 57 1 0 2 120 100 23100 571 0 1 23 57 1 0 2 23 57 1 0 3 120 100 # 1 # 2 2310–1 571 0 0 23 57 1 0 1 23 57 1 0 20 200 300 400 500 100 # 1 # 2 Typical Example IGT(25°C) I H(1kΩ) 13µA1 . 6 m A# 1 # 2 59 µA1 . 8 m A 60–20–40–60 0 20 40 80 100120 140 102 101 100 10–1 Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Repetitive Peak Reverse Voltage vs. Junction Temperature 160 120 100 0 160–40–20 20 80 140 120 140 06 0 40 100 RGK = 1kΩTypical Example Tj = 125°C Typical Example # 1 IGT(25°C)=10µA # 2 IGT(25°C)=66µA Tj = 125°C, RGK = 1kΩ Distribution Typical Example Typical Example IH(25°C) = 1mA IGT(25°C) = 25µA Typical Example Tj = 25°C Tj = 25°C Typical Example

Rev.1.00, Mar.28.20 05, page 6 of 7 Gate Trigger Current vs. Gate Current Pulse Width × 100 (%)Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Current Pulse Width (µs) 103 234100 57 1 0 1 234 57 1 0 2 102 101 # 1 # 2 Tj = 25°C Typical Example IGT(25°C) 10µA 66µA # 1 # 2

Rev.1.00, Mar.28.20 05, page 7 of 7 Package Dimensions

0.60 Max

0.55 Max

5.0 ± 0.2 0.7

2.3 Max

12.7 Min 0.42 Max 1.27 2.54 Package Name TO-92(3)SC-43A PRSS0003DE-A MASS[Typ.] 0.23g RENESAS CodeJEITA Package Code Unit: mm Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack 500 Type name CR02AM-8-E Form A8 Taping 2500 Type name – ETZ CR02AM-8-ETZ Note : Please confirm the specificat ion about the shipping in detail.

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