CQX15 QT | Alldatasheet
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[oud GaAs INFRARED EMITTING DIODE SS CQX15, CQX17 SEATING The CQX15/17 are 940nm LEDs in wide angle, TO-46 PLANE packages. A L aa T Oi tT 1s 1 ody Fer] 01 TTL pete ee LSP e,, srisat = Good optical to mechanical alignment [_INCHES _T MILLIMETERS T A = Mechanically and wavelength matched to TO-18 fa | [ass] [ass | phototransistor [wp [ore [oat | aor [saa [| ee = Hermetically sealed package [wo [100 [se7 [ss7 [a77 [| ™ High irradiance level a [os [ caso Now [127 NOM [>] & European “Pro Electron” registered a [ jf 031 {ov [7a [iar P| a [a [ass [ase [ase [ass To) 3 oP \\ ANODE! CATHODE (CONNECTED TO CASE) sTve04 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021” (.533mm) MEASURED IN GAUGING PLANE .054” + .001" — .000 (137 + 025 — 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007” (778mm) THEIR TRUE POSITION RELATIVE TO. MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.
QT | GaAs INFRARED EMITTING DIODE OPTOELECTROMICS SS ABSOLUTE MAXIMUM RATINGS (7, = 25°C Unless Otherwise Specified) Soldering: Lead Temperature (Iron) . . sees be vbeeeeeeeeeeeeees 240°C for 5 sec.°*5# Lead Temperature (Flow) . . eer 260°C for 10 sec.°** Power Dissipation (T, = 25°C) .. st eeeeeeeeeee se eeeceseceveeneeesenents . 170 mw" Power Dissipation (T; = 25°C) .. COC e eee e eee ees: sees 1.3.W ELECTRICAL CHARACTERISTICS (r, = 25°C Unless Otherwise Specified) {All measurements made under pulse conditions.) Reverse Leakage Current he = 10 HA Vn=3V Peak Emission Wavelength de 940 nm |= 100mA Total Power COX15 Po 54 = mW |, = 100mA” Total Power COX17 Po 15 = mW i= 100mA” Fall Time 100-10% of output t 1.0 “S 1. Derate power dissipation linearly 1.70mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or Isopranol alcohols are recommended as cleaning agents. 5. Soldering iron tip ‘4e" (1.6 mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Total power output, Po, is the total power radiated by the device into a solid angle of 27 steradians.
foul GaAs INFRARED EMITTING DIODE OPTOELECTRONICS I oT ee ee oo a2] S SJ ee TT ISNT TT : EAA JEETPNEL ES eZee ree CHCA i Pit ELLEN PSM TIE ee TTT bw senuad es hs ne ee, oot SA Pi EEE LE EL cot AIM TTT TTT TTT dl Ee mate omens ame vane ee ee a ofp 4 et eS a eS ca 7A ca A SS ce es ec | Po eer po eee SSS = f==2S===——— co VESSSS SESS SS aS 8 oa é (ee a a oe PEt pA — ee Se ae coe Oe Mi A A AREREREEFRA CZ TAT . [| \\ Wo TN E . Py é LAL AL LY TT NS id NM Fig. 5. Typical Radiation Pattern svi274