CQX14 QT | Alldatasheet
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QT. GaAs INFRARED EMITTING DIODE OPTOELECTRONICS en CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION SEATING The CQX14/16 are 940nm LEDs in narrow angle, TO-46 LANE packages. L a— gj od ei Lk i—7 --—/— a, Roe oy oF {ty} [po Ps, ‘811332 ™ Good optical to mechanical alignment = Mechanically and wavelength matched to T0-18 | phototransistor [eb [ore | oa [aor [sas [| eee eee) = Hermetically sealed package [ a, | 180 | 167 [452 [477 [| ® High irradiance level | # European “Pro Electron” registered [nT Toso fT 6 a a = | Loa [as [as Tass Ta [3] PACKAGE OUTLINE 3 a) \\ ANODE CATHODE (CONNECTED TO CASE) stioa NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021” (.533mm) MEASURED IN GAUGING PLANE .054” + .001” — .000 (137 + 025 — 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007” (.778mm) THEIR TRUE POSITION RELATIVE TO MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.
QT. GaAs INFRARED EMITTING DIODE OPTOELECTRONICS Cl ABSOLUTE MAXIMUM RATINGS (, = 25°C Uniess Otherwise Specified) Soldering: Lead Temperature (Flow) beceeeeeees ceceeeeeeeseeeseeseses 260°C for 10 sec.2%# Reverse Voltage .. voce eeeeeeeeeeeeeesssteeeeeeeveeeseees teceeeeeseee 8 Volts ELECTRICAL CHARACTERISTICS (1, = 25°C Unless Otherwise Specified) (All measurements made under pulse conditions.) Forward Voltage Ve _ 17 Vv i = 100mA Reverse Leakage Current In = 10 nA Va=3V Peak Emission Wavelength Ae 940 am I. = 100 mA Total Power COX16 Po 15 - mw |, = 100 mA” 1. Derate power dissipation linearly 1.70mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0mW/°C above 25°C case. 3. RMA flux is recommended. 4, Methanol or Isopranol alcohols are recommended as cleaning agents. 5. Soldering iron tip 4s” (1.6 mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Total power output, Po, is the total power radiated by the device into a solid angle of 2 steradians.
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