CQX14 FAIRCHILD | Alldatasheet
Document overview
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Technical content
0.040 (1.02) 0.100 (2.54) 0.050 (1.27) 45° 0.040 (1.02) 0.030 (0.76) NOM 0.184 (4.67) 0.209 (5.31) 1.00 (25.4) MIN 0.255 (6.48) ANODE (CASE) 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16”(1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, P O, is the total power radiated by the device into a solid angle of 2 ! steradians. PACKAGE DIMENSIONS
FEATURES
- Good optical to mechanical alignment
- Mechanically and wavelength matched to the TO-18 series phototransistor
- Hermetically sealed package
- High irradiance level
- European “Pro Electron” registered Parameter Symbol Rating Unit Operating Temperature T OPR -65 to +125 °C Storage Temperature T STG -65 to +150 °C Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C Continuous Forward Current I F 100 mA Forward Current (pw, 1µs; 200Hz) I F 10 A Reverse Voltage V R 3V Power Dissipation (TA = 25°C)(1) PD 170 mW Power Dissipation (TC = 25°C)(2) PD 1.3 W ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. CQX14, CQX16 GaAs INFRARED EMITTING DIODE
DESCRIPTION
The CQX14/16 are 940 nm LEDs in a narrow angle, TO-46 packages. ANODE (Connected To Case) 1CATHODE SCHEMATIC PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Peak Emission Wavelength I F = 100 mA "P — 940 — nm Emission Angle at 1/2 Power I F = 100 mA # — ±8 — Deg. Forward Voltage I F = 100 mA V F — — 1.7 V Reverse Leakage Current V R = 3 V I R — — 10 µA Total Power CQX14(7) IF = 100 mA P O 5.4 — — mW Total Power CQX16(7) IF = 100 mA P O 1.5 — — mW Rise Time 0-90% of output t r — 1.0 — µs Fall Time 100-10% of output t f — 1.0 — µs ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions) 2001 Fairchild Semiconductor Corporation DS300284 4/24/01 1 OF 3 www.fairchildsemi.com
DS300284 4/24/01 3 OF 3 www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HERE- IN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. CQX14, CQX16 GaAs INFRARED EMITTING DIODE