CQDD-12B CENTRAL | Alldatasheet
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12 AMP SILICON TRIAC
600 THRU 800 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQDD-12M CQDD-12N UNITS Peak Repetitive Off-State Voltage V DRM 600 800 V RMS On-State Current (TC=90°C) I T(RMS) 12 A Peak One Cycle Surge, t=8.3ms I TSM 80 A I2t Value for Fusing, t=8.3ms I 2t 27 A 2s Peak Gate Power, tp=10μs P GM 40 W Average Gate Power Dissipation P G(AV) 1.0 W Peak Gate Current, tp=10μs I GM 4.0 A Peak Gate Voltage, tp=10μs V GM 16 V Critical Rate of Rise of On-State Current Repetitive, f=60Hz di/dt 10 A/μs Operating Junction Temperature T J -40 to +125 °C Storage Temperature T stg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 2.7 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM Rated V DRM 10 μA IDRM Rated V DRM, TC=125°C 500 μA IGT V D=12V, RL=10Ω, QUAD I, II, III 9.9 20 mA IGT V D=12V, RL=10Ω, QUAD IV 24.3 50 mA IH I T=100mA 14.1 25 mA VGT V D=12V, RL=10Ω, QUAD I, II, III 1.10 1.50 V VGT V D=12V, RL=10Ω, QUAD IV 2.10 2.50 V VTM I TM=17A, tp=380μs 1.33 1.50 V dv/dt V D= 2/3 VDRM, RGK=∞, TC=125°C 10 V/μs D2PAK CASE R2 (12-February 2010) www.centralsemi.com
LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER D2PAK CASE - MECHANICAL OUTLINE www.centralsemi.com R2 (12-February 2010)