CQD-4M CENTRAL | Alldatasheet
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4.0 AMP, 600 THRU 800 VOLT
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M and CQD-4N are epoxy molded silicon TRIACs designed for full wave AC control applications featuring gate triggering in all four quadrants. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQD-4M CQD-4N UNITS Peak Repetitive Off-State Voltage V DRM 600 800 V RMS On-State Current (TC=80°C) I T(RMS) 4.0 A Peak One Cycle Surge, t=10ms I TSM 40 A I 2t Value for Fusing, t=10ms I 2t 2.4 A 2s Peak Gate Power, tp=10μs P GM 3.0 W Average Gate Power Dissipation P G(AV) 0.2 W Peak Gate Current, tp=10μs I GM 1.2 A Operating Junction Temperature T J -40 to +125 °C Storage Temperature T stg -40 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM Rated V DRM, RGK=1KΩ 10 μA IDRM Rated V DRM, RGK=1KΩ, TC=125°C 200 μA IGT V D=12V, QUAD I, II, III 2.5 5.0 mA IGT V D=12V, QUAD IV 5.4 9.0 mA IH R GK=1KΩ 1.6 5.0 mA VGT V D=12V, QUAD I, II, III, IV 0.95 1.75 V VTM I TM=6.0A, tp=380μs 1.25 1.75 V dv/dt V D= 2/3 VDRM, TC=125°C 11 V/μs DPAK CASE R2 (21-January 2013) www.centralsemi.com
DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER www.centralsemi.com R2 (21-January 2013)