CQ92-2M CENTRAL | Alldatasheet
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CQ92-2N* TRIAC
2.0 AMP, 600 THRU 800 VOLTS
Semiconductor Corp. TM R0 (22-April 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ92-2M and CQ92-2N are epoxy molded silicon Triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ92-2M CQ92-2N* UNITS Peak Repetitive Off-State Voltage V DRM 600 800 V RMS On-State Current (TC=50°C) I T(RMS) 2.0 A Peak One Cycle Surge (t=10ms) I TSM 20 A I2t Value for Fusing (t=10ms) I 2t 2.0 A 2s Peak Gate Power (tp=10µs) P GM 3.0 W Average Gate Power Dissipation P G (AV) 0.2 W Peak Gate Current (tp=10µs) I GM 1.2 A Peak Gate Voltage (tp=10µs) V GM 8.0 V Storage Temperature T stg -40 to +150 °C Junction Temperature T J -40 to +125 °C Thermal Resistance ΘJA 180 °C/W Thermal Resistance ΘJC 90 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM Rated VDRM, RGK=1KΩ 5.0 µA IDRM Rated VDRM, RGK=1KΩ, TC=125°C 200 µA IGT VD=12V, QUAD I, II, III 1.4 5.0 mA IGT VD=12V, QUAD IV 3.8 8.0 mA IH IT=100mA, RGK=1KΩ 1.2 5.0 mA VGT VD=12V, QUAD I, II, III, IV 1.1 1.8 V VTM ITM=2.0A, tp=380µs 1.50 1.75 V VTM ITM=3.0A, tp=380µs 1.7 2.0 V dv/dt V D= 2/3 VDRM, TC=125°C 2.5 V/µs * Available on request. Please consult factory.
A (DIA) 0.175 0.205 4.45 5.21 B 0.170 0.210 4.32 5.33 C 0.500 - 12.70 - D 0.016 0.022 0.41 0.56 E F G 0.125 0.165 3.18 4.19 H 0.080 0.105 2.03 2.67 I TO-92 (REV: R1) 0.015 0.38 DIMENSIONS SYMBOL INCHES MILLIMETERS 0.100 2.54 0.050 1.27 Central Semiconductor Corp. TM TO-92 CASE - MECHANICAL OUTLINE CQ92-2M CQ92-2N* TRIAC R0 (22-April 2004) LEAD CODE: 1) MT1 2) GATE 3) MT2 MARKING CODE: FULL PART NUMBER