CQ89DS CENTRAL | Alldatasheet
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CentralCentralCentralCentralCentral TM 254 CQ89DS CQ89MS CQ89NS
2.0 AMP TRIAC
400 THRU 800 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89DS series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MAXIMUM RATINGS (TC =25oC) SYMBOL CQ89DS CQ89MS CQ89NS UNITS Peak Repetitive Off-State Voltage VDRM 400 600 800 V RMS On-State Current (TC =80oC) IT(RMS) 2.0 A Peak One Cycle Surge (10ms) ITSM 10 A Peak Gate Current I GM 1.0 A Average Gate Power Dissipation PG(AV) 0.1 W StorageTemperature T stg -45 to +150 oC Junction Temperature T J -45 to +125 oC Thermal Resistance Θ J-C 10 oC/W ELECTRICAL CHARACTERISTICS (TC =25oC unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM VD =Rated VDRM 5.0 µA IDRM VD =Rated VDRM , TC =125oC 200 µA IGT VD =12V, QUAD I, II, III, IV 5.0 mA IH VD =12V 5.0 mA VGT VD =12V 2.0 V VTM IT=3.0A 1.75 V dv/dt V D =2 3 VDRM , TC =125oC 30 V/ µs SOT-89 NEW
All dimensions in inches (mm). LEAD CODE: 1) GATE 2) MT2 3) MT1