CPZ18 CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Semiconductor Corp. TM PROCESS CPZ18 Zener Diode
0.5 Watt Zener Diode Chip
Die Thickness 7.5 MILS Anode Bonding Pad Area 9.5 X 9.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 14,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE CATHODE R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 61,141
Semiconductor Corp. TM PROCESS CPZ18 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)