CPV362MF

CPV362MF IRF | Alldatasheet

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Technical content

Features

Parameter Typ. Max. Units RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 5.5 RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction — 9.0 °C/W RθCS (MODULE) Case-to-Sink, flat, greased surface 0.1 — Wt Weight of module 20 (0.7) — g (oz)

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve Output Current in a Typical 5.0 kHz Motor Drive Product Summary PD - 5.026 Fast IGBT CPV362MF 4.6 ARMS per phase (1.4 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Absolute Maximum Ratings Thermal Resistance Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current, each IGBT 8.8 IC @ TC = 100°C Continuous Collector Current, each IGBT 4.8 ICM Pulsed Collector Current 26 A ILM Clamped Inductive Load Current 26 IF @ TC = 100°C Diode Continuous Forward Current 3.4 IFM Diode Maximum Forward Current 26 VGE Gate-to-Emitter Voltage ±20 V VISOL Isolation Voltage, any terminal to case, 1 min. 2500 VRMS PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1 TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m) 7 13 19 10 164 D1 D3 D5 D2 D4 D6 Revision 1

Pulse width ≤ 80µs; duty factor ≤ 0.1%. VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω , ( See fig. 19 ) Pulse width 5.0µs, single shot. Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage— 0.72 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.6 1.8 IC = 4.8A VGE = 15V — 2.0 — V IC = 8.8A See Fig. 2, 5 VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 2.9 5.0 — S VCE = 100V, IC = 9.0A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1700 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13 IGES Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 16 21 IC = 9.0A Qge Gate - Emitter Charge (turn-on) — 2.4 3.4 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) — 7.6 10 See Fig. 8 td(on) Turn-On Delay Time — 24 — TJ = 25°C tr Rise Time — 13 — ns IC = 9.0A, VCC = 480V td(off) Turn-Off Delay Time — 160 270 VGE = 15V, RG = 50Ω tf Fall Time — 310 600 Energy losses include "tail" and Eon Turn-On Switching Loss — 0.22 — diode reverse recovery Eoff Turn-Off Switching Loss — 0.40 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 0.62 1.04 td(on) Turn-On Delay Time — 25 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time — 18 — ns IC = 9.0A, VCC = 480V td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 50Ω tf Fall Time — 600 — Energy losses include "tail" and Ets Total Switching Loss — 1.07 — mJ diode reverse recovery Cies Input Capacitance — 340 — VGE = 0V Coes Output Capacitance — 63 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 5.9 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig. — 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 3.5 50 A TJ = 25°C See Fig. — 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig. — 124 360 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig. During tb — 210 — TJ = 125°C 17

Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics CPV362MF 0.1 1 10 100 f, F re quency (kH z) Lo ad C urrent (A ) T otal O utpu t P ow e r (kW ) S T = 90°C T = 125°C Power Factor = 0.8 Modulation Depth = 0.8 V = 60% of Rated Voltage C J C C 2.5 1.9 1.2 0.6 0.1 100 0.1 1 10 C E CI , C ollector-to-E m itte r C urren t (A ) V , C ollector-to-E m itter V oltage (V ) T = 150°C T = 25°C J J V = 15V 20µs P U LS E W ID TH G E 100 5 10 15 20 CI , C ollector-to-E m itter C urrent (A ) V , G ate-to-E m itter V olta g e (V )G E T = 150°CJ V = 100V 5µs P U LS E W ID T H C C T = 25°CJ

Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature CPV362MF Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 0.01 0.1 t , R e cta n g u lar P u lse D u ra tio n (se c)1 thJC D = 0 .50 0 .0 1 0 .0 2 0 .05 0 .10 0 .20 S IN G LE P U L S E (T H E R M A L R E S P O N S E ) T h e rm a l R e sp o n se (Z ) P D M N otes: 1 . D uty factor D = t / t 2. P ea k T = P x Z + T 1 2 J D M thJC C 25 50 75 100 125 150 M a xim um D C C ollecto r C urren t (A ) T , C ase T em perature (°C )C V = 15V G E 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 8 0 1 00 120 140 160 T , C ase T em perature (°C )C C EV , C o lle ctor-to-E m itter V oltage (V ) V = 15V 80µs P U LS E W ID T H G E I = 18A I = 9.0A I = 4.5AC C C

Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature 1.24 1.26 1.28 1.30 1.32 1.34 1.36 20 30 40 50 60 G T otal S w itching Lo sse s (m J) R , G ate R esistance ( )Ω W V = 480V V = 15V T = 25°C I = 9.0A C C G E C C 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 CT , C ase T em perature (°C ) T o ta l S w itching Lo sse s (m J) I = 18A I = 9.0A I = 4.5A R = 50 V = 15V V = 480V G GE CC Ω C C C 100 200 300 400 500 600 700 1 10 100 C E C , C apacitance (pF ) V , C ollector-to-E m itter V oltage (V ) C res C oes V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GE ies ge gc ce res gc oes ce gc C ies 0 4 8 12 16 20 G EV , G ate-to-E m itter V oltage (V ) Q , Total G ate C harge (nC )g V = 400V I = 9.0A C E C

Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current CPV362MF 0.1 100 FM FInstantaneous Forward Current - I (A) Forward Voltage Drop - V (V) T = 150°C T = 125°C T = 25°C J J J 0.0 1.0 2.0 3.0 4.0 4 8 12 16 20 C T otal S w itching Losses (m J) I , C o llector-to -E m itte r C urrent (A ) R = 50 T = 150°C V = 480V V = 15V G C C C G E Ω 100 1 10 100 1000 C C E G E V , C o lle cto r-to-E m itte r V olta g e (V ) I , C o lle cto r-to -E m itte r C u rre n t (A ) S A F E O P E R A T IN G A R E A V = 20V T = 125°C G E J

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt 100 200 300 400 500 100 1000 fdi /dt - (A/µs) RRQ - (nC) I = 16A I = 8.0A I = 4.0AF F F V = 200V T = 125°C T = 25°C R J J 100 1000 10000 100 1000 fdi /dt - (A/µs) di(rec)M/dt - (A/µs) I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J 100 100 1000 fdi /dt - (A/µs) t - (ns)rr I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J 100 100 1000 fdi /dt - (A/µs) I - (A)IRRM I = 16A I = 8.0A I = 4.0AF F F V = 200V T = 125°C T = 25°C R J J

90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Same type device as D.U.T. D.U.T. 430µF80% of Vce Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = ∫Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr ∫Qrr = trr tx id dt Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 (13-pin)Section D - page D-14