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PD-5.045B Short Circuit Rated UltraFast IGBTIGBT SIP MODULE FeaturesFeaturesFeaturesFeaturesFeatures

Description

Output Current in a Typical 20 kHz Motor Drive Product Summary

  • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
  • Fully isolated printed circuit board mount package
  • Switching-loss rating includes all "tail" losses
  • HEXFRED TM soft ultrafast diodes
  • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve 4.3 A RMS per phase (1.27 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. 2/24/98 IMS-2 Parameter Typ. Max. Units R θJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 5.5 RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction ––– 9.0 °C/W R θCS (MODULE) Case-to-Sink, flat, greased surface 0.1 ––– Wt Weight of module 20 (0.7) ––– g (oz) Thermal Resistance Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7 IC @ TC = 100°C Continuous Collector Current, each IGBT 3.0 ICM Pulsed Collector Current  11 A ILM Clamped Inductive Load Current ‚ 11 IF @ TC = 100°C Diode Continuous Forward Current 3.4 IFM Diode Maximum Forward Current 11 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V VISOL Isolation Voltage, any terminal to case, 1 minute 2500 V RMS PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1 TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw 5-7 lbf•in (0.55 - 0.8 N•m) Absolute Maximum Ratings PRELIMINARY

Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ––– ––– V V GE = 0V, IC = 250µA ΔV(BR)CES/ΔTJ Temp. Coeff. of Breakdown Voltage ––– 0.49 ––– V/°C V GE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.70 1.93 I C = 3.0A V GE = 15V ––– 1.98 ––– V I C = 5.7A See Fig. 2, 5 VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 V CE = VGE , IC = 250µA ΔVGE(th)/ΔTJ Temp. Coeff. of Threshold Voltage ––– -13 ––– mV/°C V CE = VGE , IC = 250µA gfe Forward Transconductance „ 2.0 3.0 ––– S V CE = 100V, IC = 12A ICES Zero Gate Voltage Collector Current ––– ––– 250 µA V GE = 0V, VCE = 600V V FM Diode Forward Voltage Drop ––– 1.4 1.7 V I C = 8A See Fig. 13 IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA V GE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) ––– 38 57 I C = 3.0A Q ge Gate - Emitter Charge (turn-on) ––– 5.2 8 nC V CC = 400V Q gc Gate - Collector Charge (turn-on) ––– 18 27 See Fig. 8 td(on) Turn-On Delay Time ––– 23 ––– T J = 25°C tr Rise Time ––– 54 ––– ns I C = 3.0A, VCC = 480V td(off) Turn-Off Delay Time ––– 125 188 V GE = 15V, RG = 51Ω tf Fall Time ––– 120 180 Energy losses include "tail" and Eon Turn-On Switching Loss ––– 0.14 ––– diode reverse recovery. Eoff Turn-Off Switching Loss ––– 0.07 ––– mJ See Fig. 9, 10, 18 Ets Total Switching Loss ––– 0.21 0.26 tsc Short Circuit Withstand Time 10 ––– ––– µs V CC = 360V, TJ = 125°C VGE = 15V, RG = 51Ω , VCPK < 500V td(on) Turn-On Delay Time ––– 25 ––– T J = 150°C, See Fig. 10, 11, 18 tr Rise Time ––– 51 ––– ns I C =3.0A, VCC = 480V td(off) Turn-Off Delay Time ––– 308 ––– V GE = 15V, RG = 51Ω tf Fall Time ––– 166 ––– Energy losses include "tail" and Ets Total Switching Loss ––– 0.33 ––– mJ diode reverse recovery. Cies Input Capacitance ––– 450 ––– V GE = 0V Coes Output Capacitance ––– 61 ––– pF V CC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ––– 14 ––– ƒ = 1.0MHz trr Diode Reverse Recovery Time ––– 37 55 ns T J = 25°C See Fig. ––– 55 90 T J = 125°C 14 IF = 8A Irr Diode Peak Reverse Recovery Current ––– 3.5 5.0 A T J = 25°C See Fig. ––– 4.5 8.0 T J = 125°C 15 VR = 200V Q rr Diode Reverse Recovery Charge ––– 65 138 nC T J = 25°C See Fig. ––– 124 360 T J = 125°C 16 di/dt=200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs T J = 25°C See Fig. During tb ––– 210 ––– TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified)

0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 f, Frequency (KHz) LOAD CURRENT (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Total Output Power (kW) 1.46 1.17 0.88 0.59 0.29 0.00 1.76 100 1 10 V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C V = 15V 20µs PULSE WIDTH GE T = 25 CJ o T = 150 CJ o 100 5 10 15 20 V , Gate-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) GE C V = 50V 5µs PULSE WIDTH CC T = 25 CJ o T = 150 CJ o Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 2.05

Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 25 50 75 100 125 150 Maximum DC Collector Current (A) T , Case Temperature (°C )C V = 15V GE A 0.01 0.1 t , Rectangular Pulse Duration (sec)1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) Thermal Response (Z ) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) V , Collector-to-Emitter Voltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A6C I = A3C I = A1.5C

Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature R G , Gate Resistance ( Ω ) 10Ω 0 10 20 30 40 50 0.0 0.2 0.4 0.6 0.8 1.0 R , Gate Resistance (Ohm) Total Switching Losses (mJ) G V = 480V V = 15V T = 25 C I = 6.0A CC GE J C 1 10 100 200 400 600 800 V , Collector-to-Emitter Voltage (V) C, Capacitance (pF) CE V C C C 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc C ies C oes C res 0 10 20 30 40 Q , Total Gate Charge (nC) V , Gate-to-Emitter Voltage (V) G GE V = 400V I = 3A CC C -60 -40 -20 0 20 40 60 80 100 120 140 160 0.01 0.1 T , Junction Temperature ( C ) Total Switching Losses (mJ) J ° R = 51Ohm V = 15V V = 480V G GE CC I = A6C I = A3C I = A1.5C 51Ω

Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0.1 100 1 10 100 1000 C CE I , Collector-to-Emitter Current (A) SAFE OPERATING AREA V = 20V T = 125°C GE J V , Collector-to-Emitter Voltag e (V ) A 0.1 100 FM FInstantaneous Forward Current - I (A) Forward Voltage Drop - V (V) T = 150°C T = 125°C T = 25°C J J J 1 2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 I , Collector-to-emitter Current (A) Total Switching Losses (mJ) C R = 51Ohm T = 150 C V = 480V V = 15V G J CC GE Ω

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt 100 200 300 400 500 100 1000 fdi /dt - (A/µs) RRQ - (nC) I = 16A I = 8.0A I = 4.0AF F F V = 200V T = 125°C T = 25°C R J J 100 1000 10000 100 1000 fdi /dt - (A/µs) di(rec)M/dt - (A/µs) I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J 100 100 1000 fdi /dt - (A/µs) I - (A)IRRM I = 16A I = 8.0A I = 4.0AF F F V = 200V T = 125°C T = 25°C R J J 100 100 1000 fdi /dt - (A/µs) t - (ns)rr I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J

D.U.T. D.U.T. 430µF80% of Vce Fig. 18a - Test Circuit for Measurement of ILM , Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr Qr r = trr tx id dt Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current

4 X IC @25°C

Case Outline — IMS-2 Notes: Repetitive rating: VGE =20V; pulse width limited by maximum junction temperature (figure 20) ‚VCC =80%(VCES ), VGE =20V, L=10µH, RG = 23Ω (Figure 19) ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 2/98 Dimensions in Millimeters and (Inches) 7.87 (.310) 5.46 (.215) 1.27 (.050) 6.10 (.240) 3.05 ± 0.38 (.120 ± .015) 0.51 (.020) 0.38 (.015) 62.43 (2.458) 21.97 (.865) 3.94 (.155) 4.06 ± 0.51 (.160 ± .020) 5.08 (.200) 1.27 (.050) 13X 2.54 (.100) 0.76 (.030) 13X 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 NOTES: 1. Tolerance unless otherwise specified ± 0.254 (.010). 2. Controlling Dimension: Inch. 3. Dimensions are shown in Millimeter (Inches). 4. Terminal numbers are shown for reference only.