CPU165MF IRF | Alldatasheet

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Technical content

Features

Parameter Typ. Max. Units RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 1.5 RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction — 2.0 °C/W RθCS (MODULE) Case-to-Sink, flat, greased surface 0.1 — Wt Weight of module 20 (0.7) — g (oz)

  • Fully isolated printed circuit board mount package
  • Switching-loss rating includes all "tail" losses
  • HEXFREDTM soft ultrafast diodes
  • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve PD - 5.028 Fast IGBT CPU165MF Thermal Resistance Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current, each IGBT 42 IC @ TC = 100°C Continuous Collector Current, each IGBT 23 ICM Pulsed Collector Current 120 A ILM Clamped Inductive Load Current 120 IF @ TC = 100°C Diode Continuous Forward Current 15 IFM Diode Maximum Forward Current 120 VGE Gate-to-Emitter Voltage ±20 V VISOL Isolation Voltage, any terminal to case, 1 min. 2500 VRMS PD @ TC = 25°C Maximum Power Dissipation, each IGBT 83 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 33 TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m)

14 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Product Summary Output Current in a Typical 5.0 kHz Motor Drive 1,2 6,7 11,12 IMS-1

Pulse width ≤ 80µs; duty factor ≤ 0.1%. VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω , ( See fig. 19 ) Pulse width 5.0µs, single shot. Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 84 100 IC = 39A Qge Gate - Emitter Charge (turn-on) — 20 25 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) — 51 67 See Fig. 8 td(on) Turn-On Delay Time — 24 — TJ = 25°C tr Rise Time — 50 — ns IC = 39A, VCC = 480V td(off) Turn-Off Delay Time — 270 540 VGE = 15V, RG = 5.0Ω tf Fall Time — 210 360 Energy losses include "tail" and Eon Turn-On Switching Loss — 1.1 — diode reverse recovery Eoff Turn-Off Switching Loss — 2.1 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 3.2 5.4 td(on) Turn-On Delay Time — 25 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time — 49 — ns IC = 39A, VCC = 480V td(off) Turn-Off Delay Time — 440 — VGE = 15V, RG = 5.0Ω tf Fall Time — 410 — Energy losses include "tail" and Ets Total Switching Loss — 5.8 — mJ diode reverse recovery Cies Input Capacitance — 3000 — VGE = 0V Coes Output Capacitance — 340 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 40 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 50 75 ns TJ = 25°C See Fig. — 105 160 TJ = 125°C 14 IF = 25A Irr Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C See Fig. — 8.0 15 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C See Fig. — 420 1200 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig. During tb — 160 — TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ΔV(BR)CES/ΔTJ Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.3 1.5 IC = 23A VGE = 15V — 1.7 — V IC = 42A See Fig. 2, 5 — 1.4 — IC = 23A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ΔVGE(th)/ΔTJ Temp. Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 21 30 — S VCE = 100V, IC = 39A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 6500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13 — 1.2 1.5 IC = 25A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V

Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics CPU165MF 0.1 1 10 100 f, F re quency (kH z) L oad C u rrent (A ) T otal O utp ut P o w er (kW ) 9.3 6.2 3.1 S T = 90°C T = 125°C Power Factor = 0.8 Modulation Depth = 0.8 V = 60% of Rated Voltage C J C C 100 1000 0.1 1 10 C E CI , C ollector-to-E m itter C urrent (A ) V , C ollector-to-E m itter V oltage (V ) T = 150°C T = 25°C J J V = 15V 20µs P U LS E W ID TH G E 100 1000 5 10 15 20 CI , C ollector-to-E m itter C urrent (A ) V , G ate -to-E m itter V olta ge (V )G E T = 25°C T = 150°C J J V = 100V 5µs P U LS E W ID T H C C

Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature CPU165MF Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 25 50 75 100 125 150 M axim um D C C ollector C urrent (A ) T , C ase T em perature (°C )C V = 15V G E 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T , C ase T em perature (°C )C C EV , C o llector-to-E m itte r V oltage (V ) V = 15V 80µs P U LS E W ID T H G E I = 78A I = 39A I = 20A C C C 0.01 0.1 t , R ectangular P ulse D uration (sec)1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 S IN G LE P U LS E (T H E R M A L R E S P O N S E ) T herm al R esponse (Z ) P D M N otes: 1 . D uty factor D = t / t 2. P ea k T = P x Z + T 1 2 J D M th JC C

Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature 1000 2000 3000 4000 5000 6000 7000 1 10 100 C E C , C apacitance (pF ) V , C ollector-to-E m itter V oltage (V ) V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GE ies ge gc ce res gc oes ce gc C ies C res C oes 0 30 60 90 120 G EV , G ate-to-E m itter V oltage (V ) Q , Total G ate C harge (nC )g V = 480V I = 39A C E C 5.5 6.0 6.5 7.0 7.5 0 10 20 30 40 50 G T otal S w itching Losses (m J) R , G ate R esistance ( )Ω W V = 480V V = 15V T = 25°C I = 39A C C G E C C 100 -60 -40 -20 0 20 40 60 80 100 120 140 1 60 CT , C ase T em perature (°C ) T otal S w itching Lo sse s (m J) R = 2.0 V = 15V V = 480V G GE CC Ω I = 78A I = 39A I = 20A C C C

Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current CPU165MF 0 20 40 60 80 C T otal S w itching Losses (m J) I , C ollecto r-to-E m itter C urrent (A ) R = 2.0 T = 150°C V = 480V V = 15V ΩG C C C G E 100 1000 1 10 100 1000 C C E G E V , C o lle cto r-to-E m itte r V olta g e (V ) I , C o lle cto r-to -E m itte r C u rre n t (A ) S A F E O P E R A TIN G A R E A V = 20V T = 125°C G E J 100 FM FInstantaneous Forward Current - I (A) Forward Voltage Drop - V (V) T = 150°C T = 125°C T = 25°C J J J

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt 100 120 140 100 1000 fdi /dt - (A/µs) t - (ns)rr I = 50A I = 25A I = 10A F F F V = 200V T = 125°C T = 25°C R J J 100 100 1000 fdi /dt - (A/µs) I - (A)IRRM I = 10A I = 25A I = 50A F F F V = 200V T = 125°C T = 25°C R J J 300 600 900 1200 1500 100 1000 fdi /dt - (A/µs) RRQ - (nC) I = 10A I = 25A I = 50A F F F V = 200V T = 125°C T = 25°C R J J 100 1000 10000 100 1000 fdi /dt - (A/µs) di(rec)M/dt - (A/µs) I = 50A I = 25A I = 10AF F F V = 200V T = 125°C T = 25°C R J J

D.U.T. D.U.T. 430µF80% of Vce Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf CPU165MF Ic Vce t1 t2 90% Ic10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf ∫Vce ie dt 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 DUT VOLTAGE AND CURRENT GATE VOLTAGE D.U.T. +Vg10% +Vg 90% Ic trtd(on) DIODE REVERSE RECOVERY ENERGY tx Eon = ∫Erec = Vd id dt t4t3 DIODE RECOVERY WAVEFORMS Ic Vpk 10% Vcc Irr 10% Irr Vcc trr ∫Qrr = trr tx id dt Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 4 - IMS-1 Package (10 pins)Section D - page D-13