CPR3DK MARKTECH | Alldatasheet
Document overview
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Technical content
Subject to change without notice. www.cree.com
FEATURES
- Rectangular LED RF Performance – 450 & 460 nm – 33+ mW – 470 nm – 30+ mW – 527 nm – 12+ mW
- Epoxy Die Attach
- Low Forward Voltage - 3.1 V typ at 20 mA
- 1000-V ESD Threshold Rating
- InGaN Junction on Thermally Conductive SiC Substrate
APPLICATIONS
- Small LCD Backlighting – 0.8 mm & 0.6 mm sideview packages − Mobile Appliances − Digital Cameras − Car Navigation Systems
- Medium LCD Backlighting – 0.8 mm & 0.6 mm sideview packages − Portable PCs − Monitors
- LED Video Displays
- General Lighting TR260™ LEDs CxxxTR260-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting in a very bright and highly efficient solution for the 0.6-mm and 0.8-mm sideview market. The design is optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent with industry standard packaging. CxxxTR260-Sxx00 Chip Diagram D ata Sheet: CPR3D K Rev C Top View Bottom View Die Cross Section Cathode (-) 98 x 98 μm TR260 LED 260 x 480 μm t = 115 μm Bottom Surface 160 x 380 μm Anode (+) 90 μm Diameter Junction 440 x 220 μm
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc. CPR3DK Rev C Cree, Inc.
4600 Silicon Drive
Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR260-Sxx00 DC Forward Current 50 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature Range -40°C to +120°C Die Sheet Storage Conditions ≤30°C / ≤85% RH Electrostatic Discharge Threshold (HBM) Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) C450TR260-Sxx00 2.7 3.1 3.4 2 20 C460TR260-Sxx00 2.7 3.1 3.4 2 21 C470TR260-Sxx00 2.7 3.1 3.4 2 21 C527TR260-Sxx00 2.9 3.2 3.6 2 35 Mechanical Specifications CxxxTR260-Sxx00 Description Dimension Tolerance P-N Junction Area (μm) 220 x 440 ±35 Chip Area (μm) 260 x 480 ±35 Chip Thickness (μm) 115 ±15 Au Bond Pad Diameter Anode (μm) 90 -5, +15 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Area Cathode (μm) 98 x 98 -5, +15 Bottom Area (μm) 160 x 380 ±35 Notes: 1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics are measured in an integrating sphere using Illuminance E. 4. Specifications are subject to change without notice.
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc. CPR3DK Rev C Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR260-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR260-Sxxxx) orders may be filled with any or all bins (CxxxTR260-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA. 450-nm Kit 460-nm Kit C450TR260-S3300 C450TR260-0417 C450TR260-0418 C450TR260-0419 C450TR260-0420 C450TR260-0413 C450TR260-0414 C450TR260-0415 C450TR260-0416 C450TR260-0409 C450TR260-0410 C450TR260-0411 C450TR260-0412 C450TR260-0405 C450TR260-0406 C450TR260-0407 C450TR260-0408 Dominant Wavelength (nm) 447.5 450 452.5445 455 Radiant Flux (mW) C460TR260-S3300 C460TR260-0417 C460TR260-0418 C460TR260-0419 C460TR260-0420 C460TR260-0413 C460TR260-0414 C460TR260-0415 C460TR260-0416 C460TR260-0409 C460TR260-0410 C460TR260-0411 C460TR260-0412 C460TR260-0405 C460TR260-0406 C460TR260-0407 C460TR260-0408 Dominant Wavelength (nm) 457.5 460 462.5455 465 Radiant Flux (mW)
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc. CPR3DK Rev C Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for TR260 (continued) 470-nm Kit 527-nm Kit Dominant Wavelength (nm) C527TR260-S1200 C527TR260-0407 C527TR260-0408 C527TR260-0409 C527TR260-0404 C527TR260-0405 C527TR260-0406 C527TR260-0401 C527TR260-0402 C527TR260-0403 525 530 535520 Radiant Flux (mW) C470TR260-S2700 C470TR260-0413 C470TR260-0414 C470TR260-0415 C470TR260-0416 C470TR260-0409 C470TR260-0410 C470TR260-0411 C470TR260-0412 C470TR260-0405 C470TR260-0406 C470TR260-0407 C470TR260-0408 C470TR260-0401 C470TR260-0402 C470TR260-0403 C470TR260-0404 Dominant Wavelength (nm) 467.5 470 472.5465 475 Radiant Flux (mW)
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc. CPR3DK Rev C Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current -6.00 -4.00 -2.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 01 02 03 04 05 0 If (mA) Shift (nm) 460 527 Relative Intensity vs Peak Wavelength 100 120 320 420 520 620 Wavelength (nm) Relative Intensity (%) 100% 200% 300% 400% 0 20 40 60 80 100 Relative Light Intensity If (mA) Relative Intensity vs. Forward Current -15 -10 0 20 40 60 80 100 Dominant Wavelength Shift (nm) If (mA) Wavelength Shift vs. Forward Current 100 0 1 2 3 4 5 6 If (mA) Vf (V) Forward Current vs. Forward Voltage Relative Intensity vs. Peak Wavelength Wavelength (nm) Relative Intensity (%)
Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc. CPR3DK Rev C Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip.