CPQ057 CENTRAL | Alldatasheet
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145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPQ057 TRIAC
2.0 Amp, 600 Volt TRIAC Chip
R0 (29 -March 2005) BACKSIDE MT2 Process Glass Passivated Mesa Die Size 57 x 57 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 28 x 16 MILS Gate Bonding Pad Area 10 x 9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GROSS DIE PER 4 INCH WAFER 3,374