DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Adoption of MBIT Process
  • Large Current Capacity
  • Low Collector to Emitter Saturation Voltage
  • High Speed Switching
  • Ultrasmall Package Facilitates Miniaturization in End Products (mounting height : 0.9mm)
  • High Allowable Power Dissipation Typical Applications
  • Relay Drivers
  • Lamp Drivers
  • Motor Drivers
  • Flash SPECIFICATIONS ( ) : CPH3145 ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Collector to Base Voltage V CBO ( −50)80 V Collector to Emitter Voltage V CES ( −50)80 V Collector to Emitter Voltage V CEO ( −)50 V Emitter to Base Voltage V EBO ( −)6 V Collector Current I C ( −)2 A Collector Current (Pulse) I CP ( −)4 A Base Current I B ( −)400 mA Collector Dissipation When mounted on ceramic substrate (600mm × 0.8mm) PC 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Low VCE (sat) Bipolar Transistor (PNP)NPN, (–)50V, (–)2A TL ELECTRICAL CONNECTION PNP NPN

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet. MARKING PACKING TYPE : TL CPH3245CPH3145 1:Base 2:Emitter 3:Collector BE LOT No. DQ LOT No. CPH3245CPH3145

www.onsemi.com ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Conditions Value Unit min typ max Collector Cutoff Current I CBO V CB=(−)40V, IE=0A ( −)1 μA Emitter Cutoff Current I EBO V EB=(−)4V, IC=0A ( −)1 μA DC Current Gain h FE V CE=(−)2V, IC=(−)100mA 200 560 Gain-Bandwidth Product f T V CE=(−)10V, IC=(−)300mA 420 MHz Output Capacitance Cob V CB=(−)10V, f=1MHz (16)8 pF Collector to Emitter Saturation Voltage VCE(sat) IC=(−)1A, IB=(−)50mA Base to Emitter Saturation Voltage VBE(sat) (−)0.9 ( −)1.2 V Collector to Base Breakdown Voltage V(BR)CBO IC=(−)10μA, IE=0A (−50)80 V Collector to Emitter Breakdown Voltage V(BR)CES I C=(−)100μA, RBE=0Ω ( −50)80 V Collector to Emitter Breakdown Voltage V(BR)CEO IC=(−)1mA, RBE=∞ (−)50 V Emitter to Base Breakdown Voltage V(BR)EBO IE=(−)10μA, IC=0A (−)6 V Turn-ON Time ton See specified Test Circuit (35)35 ns Storage Time tstg (200)330 ns Fall Time tf (24)40 ns Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VR RB VCC=- - 2 5 VVBE=5V + + 50Ω INPUT OUTPUT RL 100μF4 7 0 μF PW=20μs IB1 D.C.≤1% IB2 IC=- - 1 0 IB1=10IB2=- - 0 . 7 A CPH3145 VR RB VCC=25VVBE=- - 5 V + + 50Ω INPUT OUTPUT RL 100μF4 7 0 μF PW=20μs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2=0.7A CPH3245

www.onsemi.com

www.onsemi.com

www.onsemi.com ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ting of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended tosupport or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject t oa l l applicable copyright laws and is not for resale in any manner. PACKAGE DIMENSIONS unit : mm Device Marking Package Shipping (Qty / Packing) CPH3145-TL-E BE CPH3 SC-59, SOT-23, TO-236 (Pb-Free) 3,000 / Tape & Reel CPH3245-TL-E DQ † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF CPH3 CASE 318BA ISSUE O Recommended Soldering Footprint 1 : Base 2 : Emitter 3 : Collector 0.6 2.4 0.95 0.95 1.4