CPH3116-TL-E

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Document overview

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Technical content

Features

• Adoption of MBIT processes
• Large current capacity
• Low collector-to-emitter saturation voltage
• High-speed switching
• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)
• High allowable power dissipation Specifi cations ( ): CPH3116 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -50)80 V Collector-to-Emitter Voltage V CES (- -50)80 V Emitter-to-Base Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)1.0 A Collector Current (Pulse) I CP (- -)3 A Base Current I B (- -)200 mA Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7015A-003 Product & Package Information
• Package : CPH3
• JEITA, JEDEC : SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TL 1 : Base 2 : Emitter 3 : Collecto r CPH3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 CPH3216CPH3116 AR LOT No. CR LOT No. CPH3216CPH3116 CPH3116-TL-E CPH3216-TL-E

No.6405-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)100mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)300mA 420 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (9)6 pF Collector-to-Emitter Saturation Voltage V CE(sat)1 I C=(- -)500mA, IB=(- -)10mA (- -280)130 (- -430)190 mV Collector-to-Emitter Saturation Voltage V CE(sat)2 I C=(- -)300mA, IB=(- -)6mA (- -145)90 (- -220)135 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)500mA, IB=(- -)10mA (- -)0.81 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -50)80 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC=(- -)100μA,RBE=0Ω (- -50)80 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Turn-On Time t on See specifi ed Test Circuit. 35 ns Storage Time t stg (170)330 ns Fall Time t f (30)40 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo CPH3116-TL-E CPH3 3,000pcs./reel Pb Free CPH3216-TL-E CPH3 3,000pcs./reel Pb Free 50mA --1000 --800 --600 --400 --200 IC -- VCE IB=0mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 1000 800 600 400 200 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A CPH3116 CPH3216 --4mA --10mA--8mA --6mA --30mA --20mA--40mA --50mA 10mA 8mA 6mA 4mA 2mA IB=0mA 30mA 20mA 40mA --2mA IT01643 IT01644 + +50Ω INPUT OUTPUT VR RB RL VCC=25V 100μF 470 μF VBE= --5V PW=20μs IB1 IB2DC≤1% (For PNP, the polarity is reversed.) IC=20IB1= --20IB2=500mA

No.6405-3/7 Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF 100 7 --0.1 23 557 --1.0 23 5 7 --10 23 5 7 --100 CPH3116 f=1MHz Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF 7 0.1 23 557 1.0 23 5 7 10 23 5 7 100 100 CPH3216 f=1MHz IT01651 IT01652 IT01647 IT01649 IT01648 IT01650 100 1000 hFE -- IC DC Current Gain, hFE Collector Current, IC -- A Ta=75°C --25°C CPH3116 VCE= --2V 25°C hFE -- IC DC Current Gain, hFE Collector Current, IC -- A Ta=75°C --25°C CPH3216 VCE=2V 25°C 100 1000 fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A 1000 100 fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A CPH3216 VCE=10V 100 1000 23 5 7 0.1 23 5 7 1.0 230.01 CPH3116 VCE= --10V --1.0 --0.9 --0.8 --0.7 --0.6 --0.4 --0.3 --0.2 --0.1 --0.5 IC -- VBE Collector Current, IC -- A --25 Ta=75 Base-to-Emitter V oltage, VBE -- V CPH3116 VCE= --2V IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V --25 Ta=75 CPH3216 VCE=2V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IT01645 IT01646

No.6405-4/7 A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 100msDC operation 100 μs500 μs 10ms 1.4 1.2 1.0 0.9 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 140 160 PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 1ms ICP=3A IC=1A 1.0 0.1 0.01 23 5 7 23 5 7 23 5 70.1 1.0 10 100 IT01659 IT01660 CPH3116 / CPH3216 CPH3116 / CPH3216 VCE(sat) -- IC Collector Current, IC -- A --25°C CPH3116 IC / IB=50 Ta=75 VCE(sat) -- IC Collector Current, IC -- A CPH3216 IC / IB=50 --25°C Ta=75 VBE(sat) -- IC Collector Current, IC -- A CPH3116 IC / IB=50 Ta= --25°C 75°C 25°C VBE(sat) -- IC Collector Current, IC -- A CPH3216 IC / IB=50 Ta= --25°C 75°C 25°C --0.01 --0.1 --1.0 IT01655 IT01657 IT01656 IT01658 --10 --1.0 --0.1 0.1 0.10.01 23 5 7 1.023 5 7 1.0 1.0 0.1 0.01 0.01 23 5 7 0.1 23 5 7 1.0 25°C 25°C VCE(sat) -- IC Collector Current, IC -- A --25°C Ta=75 CPH3116 IC / IB=20 VCE(sat) -- IC Collector Current, IC -- A CPH3216 IC / IB=20 --25°C Ta=75 IT01653 IT01654 --1.0 --0.1 --0.01 1.0 0.1 0.01 0.01 23 5 7 0.1 1.023 5 7 25°C 25°C Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V Ta=25°C Single pulse Mounted on a ceramic board (600mm2×0.8mm) For PNP, minus sign is omitted. Mounted on a ceramic board (600mm 2×0.8mm)

No.6405-5/7 Embossed Taping Specifi cation CPH3116-TL-E, CPH3216-TL-E

No.6405-6/7 Outline Drawing Land Pattern Example CPH3116-TL-E, CPH3216-TL-E Mass (g) Unit 0.013 * For reference mm Unit: mm 0.6 2.4 0.95 0.95 1.4

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