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Technical content

Features

  • Adoption of MBIT processes
  • Large current capacity
  • Low collector-to-emitter saturation voltage
  • High-speed switching
  • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)
  • High allowable power dissipation Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -15 V Collector-to-Emitter Voltage V CEO - -15 V Emitter-to-Base Voltage V EBO -- 5 V Collector Current I C - -1.5 A Collector Current (Pulse) I CP -- 3 A Base Current I B - -300 mA Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7015A-003 Product & Package Information
  • Package : CPH3
  • JEITA, JEDEC : SC-59, TO-236, SOT-23
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection AP LOT No. TL CPH3114-TL-E 1 : Base 2 : Emitter 3 : Collecto r CPH3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95

No.6394-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB= - -12V, IE=0A - -0.1 μA Emitter Cutoff Current I EBO VEB= - -4V, IC=0A - -0.1 μA DC Current Gain h FE VCE= - -2V, IC= - -100mA 200 560 Gain-Bandwidth Product f T VCE= - -2V, IC= - -300mA 350 MHz Output Capacitance Cob V CB= - -10V, f=1MHz 17 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 I C= - -750mA, IB= - -15mA - -120 - -180 mV VCE(sat)2 I C= - -1.5mA, IB= - -30mA - -210 - -320 mV Base-to-Emitter Saturation Voltage V BE(sat) I C= - -750mA, IB= - -15mA - -0.85 - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC= - -10μA, IE=0A - -15 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC= - -1mA, RBE=∞ - -15 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE= - -10μA, IC=0A - -5 V Turn-ON Time t on See specifi ed Test Circuit. 50 ns Storage Time t stg 90 ns Fall Time t f 15 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo CPH3114-TL-E CPH3 3,000pcs./reel Pb Free + +50Ω INPUT OUTPUT VR RB RL VCC= --5V 220μF 470 μF VBE=5V PW=20μs IB1 IB2DC≤1% IC=20IB1= --20IB2= --750mA --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0

0 IC -- VCE

Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT01691 --50mA --30mA --10mA --40mA --20mA --2mA --4mA --6mA --8mA IB=0 --1.0 --0.5 --0.9 --0.8 --0.7 --0.6 --0.4 --0.3 --0.2 --0.1 Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- A VCE= --2V --25 Ta=75 IT01693

No.6394-3/6 Collector Current, IC -- A hFE -- IC DC Current Gain, hFE 1000 100 VCE= --2V --25°C Ta=75°C IT01695 25°C Collector Current, IC -- A fT -- IC Gain-Bandwidth Product, fT -- MHz 1000 100 VCE= --2V IT01697 1.0 100 Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF IT01699 f=1MHz Collector Current, IC -- A VCE(sat) -- IC --1000 --100 --10 IC / IB=20 --25°C 25°CTa=75 IT01701 Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV --1000 --100 --10 Collector Current, IC -- A VCE(sat) -- IC IC / IB=50 75°C 25°C Ta= --25 IT01703 Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VBE(sat) -- IC--10 --0.1 --1.0 IC / IB=50 Ta= --25°C 75°C IT01705 25°C Base-to-Emitter Saturation V oltage, VBE(sat) -- V 23 5 7--0.1 --10 --1.0 23 5 7 23 Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- W 1.4 0.2 0.4 0.6 0.8 0.9 1.0 1.2 0 20 40 60 80 100 120 140 160 Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A --10 --1.0 --0.1 --0.01 DC operation 100ms 10ms 500 μs 100 μs ICP= --3A IC= --1.5A IT01707 IT01708 1ms Mounted on a ceramic board (600mm 2✕0.8mm) Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm)

No.6394-4/6 Embossed Taping Specifi cation CPH3114-TL-E

No.6394-5/6 Outline Drawing Land Pattern Example CPH3114-TL-E Mass (g) Unit 0.013 * For reference mm Unit: mm 0.6 2.4 0.95 0.95 1.4

PS No.6394-6/6 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.