CPDVR5V0P-HF COMCHIP | Alldatasheet
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Notes: 1. Device stressed with ten non-repetitive ESD pulses. Circuit Diagram Mechanical data - Mounting position: Any. Halogen Free ±15 VESD W 52PPPPeak Pulse Power ESD per IEC 61000-4-2(Air) Parameter Symbol Value Unit Maximum Rating (at TA=25°C unless otherwise noted) ESD per IEC 61000-4-2(Contact) Peak Pulse Current IPP ±15 A μA IR VRWM Reverse leakage current Reverse stand-Off voltage Parameter Conditions Symbol Min Typ Max Unit VRWM = 5 V Electrical Characteristics (at TA=25°C unless otherwise noted) Breakdown voltage IT = 1 mA V(BR) Clamping voltage IPP= 4 A VC V 5.6 Junction capacitance CJ pF VR= 0V , F=1MHz 3 kV ±16 ESD Voltage 0.4 Per Human Body Model Per Machine Model Low Capacitance SMD ESD Protection Diode Company reserves the right to improve product design , functions and reliability without notice. - Bi-directional ESD protection of one line. JESD22-A114-B ESD Voltage (2) (3) - Case: WBFBP-02C-A plastic-encapsulate diodes 2. Other voltages available upon request. 3. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. -55 to +150 260TLLead Solder Temperature Junction & Storage temperature range TJ, TSTG °C Maximum (10 Second Duration) (3) (3) (1) Dimensions in inches and (millimeter) WBFBP-02C-A 0.027(0.68) 0.023(0.58) 0.014(0.36) 0.002(0.05) 0.002(0.05) 0.015(0.37) 0.011(0.27) 0.015(0.39) REF. REF. REF. REF. 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) 0.022(0.55) 0.018(0.45) 0.004(0.09) 0.020(0.50) 0.016(0.40) 0.017(0.42) REF. 0.000(0.01) - Terminals: Tin plated, solderable per MIL-STD-750, method 2026.
RATING AND CHARACTERISTIC CURVES (CPDVR5V0P-HF) Page 2 Comchip Technology CO., LTD. REV:A QW-JP056 Fig.2 - Typical Capacitance Characteristics Junction Capacitance, CJ (pF) Reverse Voltage, VR ( V ) 0 1 2 543 6 Company reserves the right to improve product design , functions and reliability without notice. Clamping voltage, VC (V) Reverse Peak Pulse Current, IPP (A) Low Capacitance SMD ESD Protection Diode Time, (us) 20% 40% 60% 80% 100% 0 5 15 25 3010 20 120% Percentage of Ipp e -t td= t Ipp/2 Ta=25°C Peak Valur Ipp Test Waveform parameters tf=8us td=20us Fig.1 - 8/20us Peak Pulse Current Waveform ACC. IEC 61000-4-5 TA=25°C f=1MHz TA=25°C tp=8/20us Fig.3 - Clamping Voltage Vs. Peak Pulse Current
(mm) (inch) 2.142 ± 0.039 2.00 ± 0.10 178.00 ± 2.00 SYMBOL (mm) E F P P0 P1 W W1 1.75 ± 0.10 0.069 ± 0.004 3.50 ± 0.10 0.138 ± 0.004 0.66 ± 0.05 0.026 ± 0.002 0.66 ± 0.05 0.026 ± 0.002 9.50 ± 1.00 0.374 ± 0.039 8.00 0.30 /+ –0.10 WBFBP -02C-A WBFBP -02C-A A 1.15 ± 0.05 0.045 ± 0.002 SMD ESD Protection Diode Page 3 Comchip Technology CO., LTD. REV:A QW-JP056 Company reserves the right to improve product design , functions and reliability without notice. C E P0 P1 F W P A d Leader Tape 200±4 Empty PocketsComponents Trailer Tape 100±4 Empty Pockets
WBFBP-02C-A 10,000 REEL ( pcs ) Reel Size (inch) REEL PACK CPDVR5V0P-HF HD Marking Code Part Number Marking Code HD SMD ESD Protection Diode A C B D Suggested PAD Layout SIZE (inch) 0.022 (mm) 0.55 0.52 0.15 0.020 0.006 WBFBP-02C-A 0.63 0.025 E 1.00*0.60 PKG. A B C D Page 4 Comchip Technology CO., LTD. REV:A QW-JP056 Company reserves the right to improve product design , functions and reliability without notice. E C