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Technical content
3 Amp Glass Passivated Rectifier Chip
Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å BACKSIDE CATHODE PRINCIPAL DEVICE TYPES 1N5802 thru 1N5806 UES1101 thru UES1106 CMR3U-01 Series GROSS DIE PER 4 INCH WAFER 1,200 www.centralsemi.com R4 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R4 (22-March 2010)