CPD16 CENTRAL | Alldatasheet
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145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIP AL DEVICE TYPES UES1001 thru UES1003 UF4001 thru UF4007 CMR1U-01 Series CMR1U-01M Series GEOMETRY PROCESS DETAILS BACKSIDE CATHODE R2 (19-September 2003) Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GROSS DIE PER 4 INCH WAFER 4,520 Central Semiconductor Corp. TM PROCESS CPD16 Ultra Fast Rectifier
1.0 Amp Glass Passivated Rectifier Chip
Semiconductor Corp. TM PROCESS CPD16 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (19-September 2003) 0.1 100 1000 10000 100000 0 200 400 600 800 1000 TA = 75°C TA = 25°C TA = 125°C