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Technical content
GROSS DIE PER 5 INCH WAFER 210,600 PROCESS CPD102X Schottky Diode High Voltage Schottky Diode Chip Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å www.centralsemi.com R0 (27-September 2010)
Typical Electrical Characteristics www.centralsemi.com R0 (27-September 2010)