CPD04 CENTRAL | Alldatasheet
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145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series GEOMETRY PROCESS DETAILS BACKSIDE CATHODE R2 (16- September 2003) Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GROSS DIE PER 4 INCH WAFER 18,080 Central Semiconductor Corp. TM PROCESS CPD04 General Purpose Rectifier 500 mA Glass Passivated Rectifier Chip
Semiconductor Corp. TM PROCESS CPD04 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16- September 2003)