CPC05-SIC05-1200 CENTRAL | Alldatasheet
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MECHANICAL SPECIFICATIONS: Die Size 54.3 x 76.8 MILS Die Thickness 5.9 MILS Anode Bonding Pad Size 39.8 x 61.8 MILS Top Side Metalization Al – 50,000Å Back Side Metalization Ti/Ni/Ag – 1,000Å/2,000Å/10,000Å Scribe Alley Width 3.15 MILS Wafer Diameter 6 INCHES Gross Die Per Wafer 5,353 The CPC05-SIC05-1200 Silicon Carbide Schottky die is optimized for high temperature applications. Parametrically, the device is energy effi cient as a result of low total conduction losses and minimal changes to switching characteristics as a function of temperature. FEATURES: Positive temperature coefficient Low reverse leakage current Temperature independent switching characteristics High operating junction temperature Metalization suitable for standard die attach technologies Top metalization optimized for wire bonding MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 1200 V DC Blocking Voltage V R 1200 V Continuous Forward Current I F 5.0 A Peak Forward Surge Current (tp=10ms) I FSM 37.5 A Operating and Storage Junction Temperature* T J, Tstg -55 to +175 °C *Maximum junction temperature was determined via a TO-247 package type. Theoretically, SiC die can operate at junction temperatures greater than 600°C. ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNIT IR V R=1200V 30 190 μA VF I F=5.0A 1.5 1.7 V VF I F=5.0A, TJ=175°C 2.5 3.0 V QC VR=800V 26 nC CJ V R=1.0V, f=1.0MHz 260 pF CJ V R=400V, f=1.0MHz 24 pF CJ V R=800V, f=1.0MHz 19 pF CPC05-SIC05-1200 Silicon Carbide Schottky Rectifier Die
5.0 Amp, 1200 Volt
APPLICATIONS: Power inverters Industrial motor drives Switch-mode power supplies Power factor correction Over-current protection www.centralsemi.com R1 (22-July 2020) www.centralsemi. com
Typical Electrical Characteristics www.centralsemi.com R1 (22-July 2020)
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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