CPC01 CENTRAL | Alldatasheet
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Technical content
MECHANICAL SPECIFICATIONS: Die Size 98 x 98 MILS Die Thickness 13.8 MILS ± 0.8 MILS Die Passivation SiN / SiO2 / PI Anode Bonding Pad Area 75 x 75 MILS Top Side Metalization Al – 40,000Å Back Side Metalization Ti/W/Au – 200Å/1,000Å/1,000Å Wafer Diameter 4 INCHES Gross Die Per Wafer 1,100 The CPC01 Silicon Carbide Schottky die is optimized for high temperature applications. Parametrically, the device is energy effi cient as a result of low total conduction losses and minimal changes to switching characteristics as a function of temperature. FEATURES:
- Positive temperature coefficient
- Low reverse leakage current
- Temperature independent switching characteristics
- High operating junction temperature
- Metalization suitable for standard die attach technologies
- Top metalization optimized for wire bonding MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 1200 V DC Blocking Voltage V R 1200 V Continuous Forward Current I F 10 A Peak Forward Surge Current (tp=8.3ms) I FSM 50 A Operating and Storage Junction Temperature T J, Tstg -55 to +225 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS IR VR=1200V 60 400 μA IR V R=1200V, TJ=175°C 0.09 1.0 mA VF I F=10A 1.55 1.8 V VF I F=10A, TJ=175°C 2.3 3.0 V QC VR=800V, IF=10A, di/dt=750A/μs 54 nC CJ V R=1.0V, f=1.0MHz 477 pF CJ V R=300V, f=1.0MHz 50 pF CJ V R=600V, f=1.0MHz 41 pF CPC01 Silicon Carbide Schottky Rectifier Die
10 Amp, 1200 Volt
APPLICATIONS:
- Power inverters
- Industrial motor drives
- Switch-mode power supplies
- Power factor correction
- Over-current protection www.centralsemi.com R0 (20-March 2013) www.centralsemi. com
Typical Electrical Characteristics www.centralsemi.com R0 (20-March 2013)