CP805-CXDM4060P CENTRAL | Alldatasheet
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MECHANICAL SPECIFICATIONS: Die Size 63.8 x 38.9 MILS Die Thickness 5.5 MILS Gate Bonding Pad Area 7.1 x 7.1 MILS Source Bonding Pad Area 60.4 x 35.6 MILS Top Side Metalization Al-Cu – 40,000Å Back Side Metalization Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å Scribe Alley Width 1.97 MILS Wafer Diameter 8 INCHES Gross Die Per Wafer 17,312 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS 20 V Continuous Drain Current (Steady State) I D 6.4 A Maximum Pulsed Drain Current, tp=10μs I DM 24.4 A Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSS V GS=20V, VDS=0 100 nA IDSS V DS=40V, VGS=0 1.0 μA BVDSS V GS=0, ID=250μA 40 V VGS(th) VGS=VDS, ID=250μA 1.0 3.0 V VSD V GS=0, IS=1.0A 1.5 V rDS(ON) V GS=10V, ID=1.0A 31 mΩ rDS(ON) V GS=4.5V, ID=1.0A 42 mΩ Ciss V DS=25V, VGS=0, f=1.0MHz 1273 pF Coss V DS=25V, VGS=0, f=1.0MHz 100.5 pF Crss VDS=25V, VGS=0, f=1.0MHz 83.1 pF Q g(tot) VDS=32V, VGS=4.5V, ID=6.0A 16 nC Qgs VDS=32V, VGS=4.5V, ID=6.0A 2.7 nC Qgd VDS=32V, VGS=4.5V, ID=6.0A 6.3 nC ton 13.1 ns tr V DD=20V, VGS=10V, ID=1.0A 5.2 ns toff R G=3.3Ω, RL=20Ω 55.7 ns tf 10.7 ns R1 (17-February 2021) The CP805-CXDM4060P medium power P-Channel MOSFET is optimized for power management and drive circuit applications where energy effi ciency is a critical design element. SOURCE G www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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