CP802-CWDM3011P CENTRAL | Alldatasheet
Document overview
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Technical content
MECHANICAL SPECIFICATIONS: Die Size 83.5 x 57.1 MILS Die Thickness 5.5 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source 1 Bonding Pad Area 39.1 x 54.1 MILS Source 2 Bonding Pad Area 39.1 x 54.1 MILS Top Side Metalization Al-Cu - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å Scribe Alley Width 2.36 MILS Wafer Diameter 8 INCHES Gross Die Per Wafer 8,360 R0 (14-April 2020) The CP802-CWDM3011P medium power P-Channel MOSFET is designed for power management and load switching applications. The 5.5 mil thick die provides an ultra low profi le device that is readily attached using standard die attach wire bond processes. FEATURES: Low on-resistance, rDS(ON) Low gate charge, Qgs High drain current density APPLICATIONS: Load switching Power management DC-DC conversion MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS 20 V Continuous Drain Current (Steady State) I D 11 A Maximum Pulsed Drain Current, tp=10μs I DM 50 A Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=20V, VDS=0 100 nA IDSS V DS=30V, VGS=0 1.0 μA BVDSS V GS=0, ID=250μA 30 V VGS(th) VGS=VDS, ID=250μA 1.0 1.4 3.0 V VSD VGS=0, IS=2.6A 1.3 V rDS(ON) V GS=10V, ID=1.0A 6.6 13 mΩ rDS(ON) V GS=4.5V, ID=1.0A 8.2 16 mΩ Crss V DS=8.0V, VGS=0, f=1.0MHz 450 pF Ciss V DS=8.0V, VGS=0, f=1.0MHz 3100 pF Coss VDS=8.0V, VGS=0, f=1.0MHz 320 pF Q g(tot) VDD=15V, VGS=10V, ID=11A 80 nC Qgs VDD=15V, VGS=10V, ID=11A 7.0 nC Qgd VDD=15V, VGS=10V, ID=11A 10.1 nC ton VDD=15V, VGS=10V, ID=1.0A 49 ns toff RG=6.0Ω, RL=15Ω 330 ns www.centralsemi. com
Typical Electrical Characteristics R0 (14-April 2020) www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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