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Technical content
GROSS DIE PER 6 INCH WAFER 290,000 PROCESS CP759R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å www.centralsemi.com R0 (13-May 2010)
Typical Electrical Characteristics www.centralsemi.com R0 (13-May 2010)