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Technical content
GROSS DIE PER 6 INCH WAFER 63,570 PROCESS CP757X Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 22 x 17 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 14 x 9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å www.centralsemi.com R0 (2-December 2010)
Typical Electrical Characteristics www.centralsemi.com R0 (2-December 2010)