CP753V CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
PNP - High Current Transistor Chip PRINCIPAL DEVICE TYPES CZT953 Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area 7.9 x 9.5 MILS Top Side Metalization Al-Si 30,000Å Back Side Metalization Au 12,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (23- September 2005) GROSS DIER PER 5 INCH WAFER 3,878