CP736V-2N3637 CENTRAL | Alldatasheet

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Technical content

The CP736V-2N3637 die is a PNP silicon transistor designed for high voltage amplifi er applications. MECHANICAL SPECIFICATIONS: Die Size 17.3 x 17.3 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 3.9 x 3.9 MILS Emitter Bonding Pad Size 3.9 x 3.9 MILS Top Side Metalization Al-Si - 17,000Å Back Side Metalization Au - 9,000Å Scribe Alley Width 1.8 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 57,735 CP736V-2N3637 PNP - High Voltage Transistor Die

1.0 Amp, 175 Volt

MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 175 V Collector-Emitter Voltage V CEO 175 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 1.0 A Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=100V 100 nA IEBO V EB=3.0V 50 nA BVCBO I C=100μA 175 V BVCEO I C=10mA 175 V BVEBO I E=10μA 5.0 V VCE(SAT) I C=10mA, IB=1.0mA 0.3 V VCE(SAT) I C=50mA, IB=5.0mA 0.5 V VBE(SAT) I C=10mA, IB=1.0mA 0.8 V VBE(SAT) I C=50mA, IB=5.0mA 0.65 0.9 V hFE V CE=10V, IC=0.1mA 80 hFE V CE=10V, IC=1.0mA 90 hFE V CE=10V, IC=10mA 100 hFE V CE=10V, IC=50mA 100 300 hFE V CE=10V, IC=150mA 50 fT V CE =30V, IC=30mA, f=100MHz 200 MHz Cob V CB=20V, IE=0, f=1.0MHz 10 pF Cib V EB=1.0V, IC=0, f=1.0MHz 75 pF ton V CC=100V, VBE=4.0V, IC=50mA, 400 ns toff I B1=IB2=5.0mA 600 ns www.centralsemi.com R1 (23-May 2017) www.centralsemi. com

ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS hie V CE=10V, IC=10mA, f=1.0kHz 200 1200 Ω hre V CE=10V, IC=10mA, f=1.0kHz 3.0 x10 -4 hfe V CE=10V, IC=10mA, f=1.0kHz 80 320 hoe V CE=10V, IC=10mA, f=1.0kHz 200 μS NF V CE=10V, IC=0.5mA, f=1.0kHz, R S=1.0kΩ 3.0 dB CP736V-2N3637 PNP - High Voltage Transistor Die R1 (23-May 2017) www.centralsemi. com

Typical Electrical Characteristics R1 (23-May 2017) www.centralsemi. com

WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com

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