CP734V CENTRAL | Alldatasheet
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Technical content
PNP - Chopper Transistor Chip PRINCIPAL DEVICE TYPES CMPT404A MPS404A Process Epitaxial Planar Die Size 31.5 x 31.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.7 x 6.7 MILS Emitter Bonding Pad Area 4.7 x 8.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (5- January 2006) GROSS DIE PER 4 INCH WAFER 11,210