CP726X-CMLDM8120 CENTRAL | Alldatasheet

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Technical content

Die Size 27.6 x 31.5 MILS Die Thickness 5.5 MILS Gate Bonding Pad Size 3.9 x 3.9 MILS Source Bonding Pad Size 20.2 x 24.1 MILS Top Side Metalization Al-Si – 35,000Å Back Side Metalization Au – 9,000Å Scribe Alley Width 1.97 MILS Wafer Diameter 6 INCHES Gross Die Per Wafer 27,100 The CP726X-CMLDM8120 is a silicon P-Channel MOSFET designed for power management and load switching applications. MECHANICAL SPECIFICATIONS: BACKSIDE DRAIN R0 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS 8.0 V Continuous Drain Current (Steady State) I D 860 mA Continuous Drain Current, t≤5.0s I D 950 mA Continuous Source Current (Body Diode) I S 360 mA Maximum Pulsed Drain Current, tp=10μs I DM 4.0 A Maximum Pulsed Source Current, tp=10μs I SM 4.0 A Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=8.0V, VDS=0 50 nA IDSS V DS=20V, VGS=0 500 nA BVDSS V GS=0, ID=250μA 20 V VGS(th) VDS=VGS, ID=250μA 0.45 1.0 V VSD VGS=0V, IS=360mA 0.9 V rDS(ON) V GS=4.5V, ID=0.95A 0.15 Ω rDS(ON) V GS=4.5V, ID=0.77A 0.142 Ω rDS(ON) V GS=2.5V, ID=0.67A 0.20 Ω rDS(ON) V GS=1.8V, ID =0.2A 0.24 Ω gFS V DS=10V, ID=0.81A 2.0 S Crss V DS=16V, VGS=0, f=1.0MHz 80 pF Ciss V DS=16V, VGS=0, f=1.0MHz 200 pF Coss VDS=16V, VGS=0, f=1.0MHz 60 pF Qg(tot) V DS=10V, VGS=4.5V, ID=1.0A 3.56 nC Qgs V DS=10V, VGS=4.5V, ID=1.0A 0.36 nC Qgd V DS=10V, VGS=4.5V, ID=1.0A 1.52 nC ton VDD=10V, VGS=4.5V, 20 ns toff ID=0.95A, RG=6Ω 25 ns R0 (2-August 2016) www.centralsemi. com

Typical Electrical Characteristics R0 (2-August 2016) www.centralsemi. com

WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com

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