CP710V-CMPTA96 CENTRAL | Alldatasheet
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Technical content
PNP - High Voltage Transistor Die Die Size 26 x 26 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 6.1 x 4.9 MILS Emitter Bonding Pad Size 5.2 x 5.2 MILS Top Side Metalization Al – 30,000Å Back Side Metalization Au – 9,000Å Scribe Alley Width 2.2 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 25,214 The CP710V-CMPTA96 is a silicon PNP transistor designed for high voltage applications. MECHANICAL SPECIFICATIONS: BACKSIDE COLLECTOR R2 E B MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 450 V Collector-Emitter Voltage V CEO 450 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 500 mA Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=400V 100 nA IEBO V BE=4.0V 100 nA BVCBO I C=100µA 450 V BVCEO I C=1.0mA 450 V BVEBO I E=10µA 6.0 V VCE(SAT) I C=1.0mA, IB=0.1mA 0.20 V VCE(SAT) I C=10mA, IB=1.0mA 0.30 V VCE(SAT) I C=50mA, IB=5.0mA 0.50 V VBE(SAT) I C=10mA, IB=1.0mA 1.0 V hFE V CE=10V, IC=1.0mA 40 hFE V CE=10V, IC=10mA 50 200 hFE V CE=10V, IC =50mA 45 hFE V CE=10V, IC=100mA 25 fT V CE=10V, IC=10mA, f=10MHz 20 MHz Cob V CB=20V, IE=0, f=1.0MHz 7.0 pF Cib V EB=0.5V, IC=0, f=1.0MHz 130 pF R0 (1-August 2016) www.centralsemi. com
Typical Electrical Characteristics R0 (1-August 2016) www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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