CP710 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PRINCIPAL DEVICE TYPES CMPTA94 CXTA94 CZTA94 MPSA94 Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE COLLECTOR R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 16,880
Semiconductor Corp. TM PROCESS CP710 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) "ON" Voltage 0.2 0.4 0.6 0.8 1.2 1.4 1 10 100 1000 IC, Collector Current (mA) V, Voltage (V) VBE(S) @ IC/IB = 10 TA = 25°C VCE(S) @ IC/IB = 10