CP704 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 PROCESS CP704 Small Signal Transistors PNP - High Current Transistor Chip PRINCIPAL DEVICE TYPES MPSA55 MPSA56 GEOMETRY PROCESS DETAILS R1 (15 -April 2005) BACKSIDE COLLECTOR Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.7 X 3.7 MILS Emitter Bonding Pad Area 4.2 X 4.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GROSS DIE PER 4 INCH WAFER 23,450
Semiconductor Corp. TM PROCESS CP704 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 R1 (15 -April 2005)