CP701 CENTRAL | Alldatasheet
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Technical content
PNP - High Voltage Transistor Chip PRINCIPAL DEVICE TYPES CMPT6520 CMPTA92 CXTA92 CZTA92 MPSA92 Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE COLLECTOR R1 (27- November 2001) GROSS DIE PER 4 INCH WAFER 16,880